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Electron trapping in SiO2 at 295 and 77 °K

Publication ,  Journal Article
Young, DR; Irene, EA; DiMaria, DJ; De Keersmaecker, RF; Massoud, HZ
Published in: Journal of Applied Physics
December 1, 1979
Published version (DOI)

The electron trapping behavior of SiO2 has been measured as a function of thickness at 295 and 77 °K. The devices used were metal-oxide-semiconductor devices with the SiO2 grown thermally. The results indicate bulk traps are dominant at 295 °K and traps associated with the Si-SiO2 interface are dominant at 77 °K. The effect of processing conditions was also studied and the optimum conditions are different for the two temperatures used for the measurements. These observations have been verified using a photo I-V technique. The generation of donor states in the SiO2 near the Si-SiO2 interface was observed as a result of the electron current through the SiO2.

Duke Scholars

Hisham Z. Massoud
Author Hisham Z. Massoud Electrical and Computer Engineering

Published In

Journal of Applied Physics

DOI

10.1063/1.325727

ISSN

0021-8979

Publication Date

December 1, 1979

Volume

50

Issue

10

Start / End Page

6366 / 6372

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

Citation

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Young, D. R., Irene, E. A., DiMaria, D. J., De Keersmaecker, R. F., & Massoud, H. Z. (1979). Electron trapping in SiO2 at 295 and 77 °K. Journal of Applied Physics, 50(10), 6366–6372. https://doi.org/10.1063/1.325727
Young, D. R., E. A. Irene, D. J. DiMaria, R. F. De Keersmaecker, and H. Z. Massoud. “Electron trapping in SiO2 at 295 and 77 °K.” Journal of Applied Physics 50, no. 10 (December 1, 1979): 6366–72. https://doi.org/10.1063/1.325727.
Young DR, Irene EA, DiMaria DJ, De Keersmaecker RF, Massoud HZ. Electron trapping in SiO2 at 295 and 77 °K. Journal of Applied Physics. 1979 Dec 1;50(10):6366–72.
Young, D. R., et al. “Electron trapping in SiO2 at 295 and 77 °K.” Journal of Applied Physics, vol. 50, no. 10, Dec. 1979, pp. 6366–72. Scopus, doi:10.1063/1.325727.
Young DR, Irene EA, DiMaria DJ, De Keersmaecker RF, Massoud HZ. Electron trapping in SiO2 at 295 and 77 °K. Journal of Applied Physics. 1979 Dec 1;50(10):6366–6372.
Journal cover image

Published In

Journal of Applied Physics

DOI

10.1063/1.325727

ISSN

0021-8979

Publication Date

December 1, 1979

Volume

50

Issue

10

Start / End Page

6366 / 6372

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences