Etch enhanced low capacitance, large area thin film InGaAs metal-semiconductor-metal photodetectors

Journal Article

The enhancement of the impulse response and capacitance performance of thin film InGaAs metal-semiconductor-metal (MSM) was carried out through etching. The capacitances of the MSM were measured using scattering parameter measurements using a lightwave component analyzer. The thin film I-MSM photodetector cladding layers were etched while leaving the adsorbing layers intact. The measured impulse response results show improvement as the thickness of the thin film I-MSMs decrease, which was correlated with the reduction of the capacitance.

Duke Authors

Cited Authors

  • Seo, SW; Cha, C; Cho, SY; Huang, S; Jokerst, NM; Brooke, MA; Brown, AS

Published Date

  • December 1, 2004

Published In

Volume / Issue

  • 1 /

Start / End Page

  • 222 - 223

International Standard Serial Number (ISSN)

  • 1092-8081

Citation Source

  • Scopus