Etch enhanced low capacitance, large area thin film InGaAs metal-semiconductor-metal photodetectors
The enhancement of the impulse response and capacitance performance of thin film InGaAs metal-semiconductor-metal (MSM) was carried out through etching. The capacitances of the MSM were measured using scattering parameter measurements using a lightwave component analyzer. The thin film I-MSM photodetector cladding layers were etched while leaving the adsorbing layers intact. The measured impulse response results show improvement as the thickness of the thin film I-MSMs decrease, which was correlated with the reduction of the capacitance.