Handbook of Crystal Growth: Thin Films and Epitaxy: Second Edition
In Situ Characterization of Epitaxy
Publication
, Chapter
Brown, AS; Losurdo, M
January 1, 2015
Methods enabling in situ characterization of epitaxy have been crucial to achieving device-quality materials. This chapter focuses on key characterization techniques, including spectroscopic ellipsometry, reflectance anisotropy spectroscopy, desorption mass spectroscopy, and reflection high-energy electron diffraction applied to both molecular beam epitaxy and metal-organic chemical vapor deposition. Numerous examples are provided to illustrate how the techniques are used and can be applied to a range of materials synthesized as planar films, heterostructures, and nanostructures.
Duke Scholars
DOI
Publication Date
January 1, 2015
Volume
3
Start / End Page
1169 / 1209
Citation
APA
Chicago
ICMJE
MLA
NLM
Brown, A. S., & Losurdo, M. (2015). In Situ Characterization of Epitaxy. In Handbook of Crystal Growth: Thin Films and Epitaxy: Second Edition (Vol. 3, pp. 1169–1209). https://doi.org/10.1016/B978-0-444-63304-0.00029-9
Brown, A. S., and M. Losurdo. “In Situ Characterization of Epitaxy.” In Handbook of Crystal Growth: Thin Films and Epitaxy: Second Edition, 3:1169–1209, 2015. https://doi.org/10.1016/B978-0-444-63304-0.00029-9.
Brown AS, Losurdo M. In Situ Characterization of Epitaxy. In: Handbook of Crystal Growth: Thin Films and Epitaxy: Second Edition. 2015. p. 1169–209.
Brown, A. S., and M. Losurdo. “In Situ Characterization of Epitaxy.” Handbook of Crystal Growth: Thin Films and Epitaxy: Second Edition, vol. 3, 2015, pp. 1169–209. Scopus, doi:10.1016/B978-0-444-63304-0.00029-9.
Brown AS, Losurdo M. In Situ Characterization of Epitaxy. Handbook of Crystal Growth: Thin Films and Epitaxy: Second Edition. 2015. p. 1169–1209.
DOI
Publication Date
January 1, 2015
Volume
3
Start / End Page
1169 / 1209