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Handbook of Crystal Growth Thin Films and Epitaxy Second Edition

In Situ Characterization of Epitaxy

Publication ,  Chapter
Brown, AS; Losurdo, M
January 1, 2015

Methods enabling in situ characterization of epitaxy have been crucial to achieving device-quality materials. This chapter focuses on key characterization techniques, including spectroscopic ellipsometry, reflectance anisotropy spectroscopy, desorption mass spectroscopy, and reflection high-energy electron diffraction applied to both molecular beam epitaxy and metal-organic chemical vapor deposition. Numerous examples are provided to illustrate how the techniques are used and can be applied to a range of materials synthesized as planar films, heterostructures, and nanostructures.

Duke Scholars

DOI

Publication Date

January 1, 2015

Volume

3

Start / End Page

1169 / 1209
 

Citation

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Brown, A. S., & Losurdo, M. (2015). In Situ Characterization of Epitaxy. In Handbook of Crystal Growth Thin Films and Epitaxy Second Edition (Vol. 3, pp. 1169–1209). https://doi.org/10.1016/B978-0-444-63304-0.00029-9
Brown, A. S., and M. Losurdo. “In Situ Characterization of Epitaxy.” In Handbook of Crystal Growth Thin Films and Epitaxy Second Edition, 3:1169–1209, 2015. https://doi.org/10.1016/B978-0-444-63304-0.00029-9.
Brown AS, Losurdo M. In Situ Characterization of Epitaxy. In: Handbook of Crystal Growth Thin Films and Epitaxy Second Edition. 2015. p. 1169–209.
Brown, A. S., and M. Losurdo. “In Situ Characterization of Epitaxy.” Handbook of Crystal Growth Thin Films and Epitaxy Second Edition, vol. 3, 2015, pp. 1169–209. Scopus, doi:10.1016/B978-0-444-63304-0.00029-9.
Brown AS, Losurdo M. In Situ Characterization of Epitaxy. Handbook of Crystal Growth Thin Films and Epitaxy Second Edition. 2015. p. 1169–1209.

DOI

Publication Date

January 1, 2015

Volume

3

Start / End Page

1169 / 1209