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Spin-hall assisted STT-RAM design and discussion

Publication ,  Conference
Eken, E; Bayram, I; Zhang, Y; Yan, B; Wu, W; Li, H; Chen, Y
Published in: Proceedings of the 18th ACM/IEEE System Level Interconnect Prediction 2016 Workshop, SLIP 2016
June 4, 2016

In recent years, Spin-Transfer Torque Random Access Memory (STT-RAM) has attracted significant attentions from both industry and academia due to its attractive attributes such as small cell area and non-volatility. However, long switching time and large programming energy of Magnetic Tunneling Junction (MTJ) continue being major challenges in STT-RAM designs. In order to overcome this problem, a Spin-Hall Effect (SHE) assisted STT-RAM structure (SHE-RAM) has been recently invented. In this work, we investigate two possible SHE-RAM designs from the aspects of two different write access operations, namely, High Density SHE-RAM and Disturbance Free SHE-RAM, respectively. In High Density SHE-RAM, SHE current is shared by the entire bit line. Such a structure removes the SHE control transistor from each SHE-RAM cell and hence, substantially reduces the memory cell area. In Disturbance Free SHE-RAM, one memory cell contains two transistors to remove the disturbance to the unselected bits and eliminate the possible erroneous flipping of the bits.

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Published In

Proceedings of the 18th ACM/IEEE System Level Interconnect Prediction 2016 Workshop, SLIP 2016

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Publication Date

June 4, 2016
 

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Eken, E., Bayram, I., Zhang, Y., Yan, B., Wu, W., Li, H., & Chen, Y. (2016). Spin-hall assisted STT-RAM design and discussion. In Proceedings of the 18th ACM/IEEE System Level Interconnect Prediction 2016 Workshop, SLIP 2016. https://doi.org/10.1145/2947357.2947360
Eken, E., I. Bayram, Y. Zhang, B. Yan, W. Wu, H. Li, and Y. Chen. “Spin-hall assisted STT-RAM design and discussion.” In Proceedings of the 18th ACM/IEEE System Level Interconnect Prediction 2016 Workshop, SLIP 2016, 2016. https://doi.org/10.1145/2947357.2947360.
Eken E, Bayram I, Zhang Y, Yan B, Wu W, Li H, et al. Spin-hall assisted STT-RAM design and discussion. In: Proceedings of the 18th ACM/IEEE System Level Interconnect Prediction 2016 Workshop, SLIP 2016. 2016.
Eken, E., et al. “Spin-hall assisted STT-RAM design and discussion.” Proceedings of the 18th ACM/IEEE System Level Interconnect Prediction 2016 Workshop, SLIP 2016, 2016. Scopus, doi:10.1145/2947357.2947360.
Eken E, Bayram I, Zhang Y, Yan B, Wu W, Li H, Chen Y. Spin-hall assisted STT-RAM design and discussion. Proceedings of the 18th ACM/IEEE System Level Interconnect Prediction 2016 Workshop, SLIP 2016. 2016.

Published In

Proceedings of the 18th ACM/IEEE System Level Interconnect Prediction 2016 Workshop, SLIP 2016

DOI

Publication Date

June 4, 2016