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Looking Ahead for Resistive Memory Technology: A broad perspective on ReRAM technology for future storage and computing

Publication ,  Journal Article
Li, HH; Chen, Y; Liu, C; Strachan, JP; Davila, N
Published in: IEEE Consumer Electronics Magazine
January 1, 2017

Resistive random-access memory (ReRAM) is regarded as one of the most promising alternative nonvolatile memory technologies for its advantages in very-high-storage density, simple structure, low power consumption, and long endurance, as well as good compatibility with traditional complimentary metal-oxide-semiconductor (CMOS) technology. In addition to the data storage, ReRAM can also be used for logic operation and computation, demonstrating a great potential in developing a non-von Neumann computing system. Extensive studies on ReRAM technology, including material, device process, cell and array structure, circuit, and architecture, have been conducted in recent years. In this article, we provide a broad perspective on ReRAM technology for future storage and computing. The models, challenges, and applications are also summarized.

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Published In

IEEE Consumer Electronics Magazine

DOI

EISSN

2162-2256

ISSN

2162-2248

Publication Date

January 1, 2017

Volume

6

Issue

1

Start / End Page

94 / 103

Related Subject Headings

  • 46 Information and computing sciences
  • 40 Engineering
 

Citation

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Li, H. H., Chen, Y., Liu, C., Strachan, J. P., & Davila, N. (2017). Looking Ahead for Resistive Memory Technology: A broad perspective on ReRAM technology for future storage and computing. IEEE Consumer Electronics Magazine, 6(1), 94–103. https://doi.org/10.1109/MCE.2016.2614523
Li, H. H., Y. Chen, C. Liu, J. P. Strachan, and N. Davila. “Looking Ahead for Resistive Memory Technology: A broad perspective on ReRAM technology for future storage and computing.” IEEE Consumer Electronics Magazine 6, no. 1 (January 1, 2017): 94–103. https://doi.org/10.1109/MCE.2016.2614523.
Li HH, Chen Y, Liu C, Strachan JP, Davila N. Looking Ahead for Resistive Memory Technology: A broad perspective on ReRAM technology for future storage and computing. IEEE Consumer Electronics Magazine. 2017 Jan 1;6(1):94–103.
Li, H. H., et al. “Looking Ahead for Resistive Memory Technology: A broad perspective on ReRAM technology for future storage and computing.” IEEE Consumer Electronics Magazine, vol. 6, no. 1, Jan. 2017, pp. 94–103. Scopus, doi:10.1109/MCE.2016.2614523.
Li HH, Chen Y, Liu C, Strachan JP, Davila N. Looking Ahead for Resistive Memory Technology: A broad perspective on ReRAM technology for future storage and computing. IEEE Consumer Electronics Magazine. 2017 Jan 1;6(1):94–103.

Published In

IEEE Consumer Electronics Magazine

DOI

EISSN

2162-2256

ISSN

2162-2248

Publication Date

January 1, 2017

Volume

6

Issue

1

Start / End Page

94 / 103

Related Subject Headings

  • 46 Information and computing sciences
  • 40 Engineering