Scholars@Duke

UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy

Publication ,  Journal Article
Kong, W; Roberts, AT; Jiao, WY; Fournelle, J; Kim, TH; Losurdo, M; Everitt, HO; Brown, AS
Published in: AIP Advances
March 1, 2017
Published version (DOI)

A high Al-content (y > 0.4) multi-quantum-well (MQW) structure with a quaternary InxAlyGa(1-x-y)N active layer was synthesized using plasma-assisted molecular beam epitaxy. The MQW structure exhibits strong carrier confinement and room temperature ultraviolet-B (UVB) photoluminescence an order of magnitude stronger than that of a reference InxAlyGa(1-x-y)N thin film with comparable composition and thickness. The samples were characterized using spectroscopic ellipsometry, atomic force microscopy, and high-resolution X-ray diffraction. Numerical simulations suggest that the UVB emission efficiency is limited by dislocation-related non-radiative recombination centers in the MQW and at the MQW - buffer interface. Emission efficiency can be significantly improved by reducing the dislocation density from 109cm-2 to 107cm-2 and by optimizing the width and depth of the quantum wells.

Duke Scholars

April S. Brown
Author April S. Brown Electrical and Computer Engineering

Published In

AIP Advances

DOI

10.1063/1.4973637

EISSN

2158-3226

Publication Date

March 1, 2017

Volume

7

Issue

3

Related Subject Headings

  • 51 Physical sciences
  • 40 Engineering
  • 0906 Electrical and Electronic Engineering
  • 0206 Quantum Physics
  • 0205 Optical Physics
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Kong, W., Roberts, A. T., Jiao, W. Y., Fournelle, J., Kim, T. H., Losurdo, M., … Brown, A. S. (2017). UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy. AIP Advances, 7(3). https://doi.org/10.1063/1.4973637
Kong, W., A. T. Roberts, W. Y. Jiao, J. Fournelle, T. H. Kim, M. Losurdo, H. O. Everitt, and A. S. Brown. “UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy.” AIP Advances 7, no. 3 (March 1, 2017). https://doi.org/10.1063/1.4973637.
Kong W, Roberts AT, Jiao WY, Fournelle J, Kim TH, Losurdo M, et al. UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy. AIP Advances. 2017 Mar 1;7(3).
Kong, W., et al. “UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy.” AIP Advances, vol. 7, no. 3, Mar. 2017. Scopus, doi:10.1063/1.4973637.
Kong W, Roberts AT, Jiao WY, Fournelle J, Kim TH, Losurdo M, Everitt HO, Brown AS. UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy. AIP Advances. 2017 Mar 1;7(3).

Published In

AIP Advances

DOI

10.1063/1.4973637

EISSN

2158-3226

Publication Date

March 1, 2017

Volume

7

Issue

3

Related Subject Headings

  • 51 Physical sciences
  • 40 Engineering
  • 0906 Electrical and Electronic Engineering
  • 0206 Quantum Physics
  • 0205 Optical Physics