Scholars@Duke

UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy

Publication ,  Journal Article
Kong, W; Roberts, AT; Jiao, WY; Fournelle, J; Kim, TH; Losurdo, M; Everitt, HO; Brown, AS
Published in: Aip Advances
March 1, 2017
Published version (DOI)

A high Al-content (y > 0.4) multi-quantum-well (MQW) structure with a quaternary InxAlyGa(1-x-y)N active layer was synthesized using plasma-assisted molecular beam epitaxy. The MQW structure exhibits strong carrier confinement and room temperature ultraviolet-B (UVB) photoluminescence an order of magnitude stronger than that of a reference InxAlyGa(1-x-y)N thin film with comparable composition and thickness. The samples were characterized using spectroscopic ellipsometry, atomic force microscopy, and high-resolution X-ray diffraction. Numerical simulations suggest that the UVB emission efficiency is limited by dislocation-related non-radiative recombination centers in the MQW and at the MQW - buffer interface. Emission efficiency can be significantly improved by reducing the dislocation density from 109cm-2 to 107cm-2 and by optimizing the width and depth of the quantum wells.

Duke Scholars

Henry Everitt
Author Henry Everitt Physics
April S. Brown
Author April S. Brown Electrical and Computer Engineering

Published In

Aip Advances

DOI

10.1063/1.4973637

EISSN

2158-3226

Publication Date

March 1, 2017

Volume

7

Issue

3

Related Subject Headings

  • 51 Physical sciences
  • 40 Engineering
  • 0906 Electrical and Electronic Engineering
  • 0206 Quantum Physics
  • 0205 Optical Physics
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Kong, W., Roberts, A. T., Jiao, W. Y., Fournelle, J., Kim, T. H., Losurdo, M., … Brown, A. S. (2017). UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy. Aip Advances, 7(3). https://doi.org/10.1063/1.4973637
Kong, W., A. T. Roberts, W. Y. Jiao, J. Fournelle, T. H. Kim, M. Losurdo, H. O. Everitt, and A. S. Brown. “UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy.” Aip Advances 7, no. 3 (March 1, 2017). https://doi.org/10.1063/1.4973637.
Kong W, Roberts AT, Jiao WY, Fournelle J, Kim TH, Losurdo M, et al. UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy. Aip Advances. 2017 Mar 1;7(3).
Kong, W., et al. “UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy.” Aip Advances, vol. 7, no. 3, Mar. 2017. Scopus, doi:10.1063/1.4973637.
Kong W, Roberts AT, Jiao WY, Fournelle J, Kim TH, Losurdo M, Everitt HO, Brown AS. UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy. Aip Advances. 2017 Mar 1;7(3).

Published In

Aip Advances

DOI

10.1063/1.4973637

EISSN

2158-3226

Publication Date

March 1, 2017

Volume

7

Issue

3

Related Subject Headings

  • 51 Physical sciences
  • 40 Engineering
  • 0906 Electrical and Electronic Engineering
  • 0206 Quantum Physics
  • 0205 Optical Physics