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Earth-Abundant Chalcogenide Photovoltaic Devices with over 5% Efficiency Based on a Cu2 BaSn(S,Se)4 Absorber.

Publication ,  Journal Article
Shin, D; Zhu, T; Huang, X; Gunawan, O; Blum, V; Mitzi, DB
Published in: Advanced materials (Deerfield Beach, Fla.)
June 2017

In recent years, Cu2 ZnSn(S,Se)4 (CZTSSe) materials have enabled important progress in associated thin-film photovoltaic (PV) technology, while avoiding scarce and/or toxic metals; however, cationic disorder and associated band tailing fundamentally limit device performance. Cu2 BaSnS4 (CBTS) has recently been proposed as a prospective alternative large bandgap (~2 eV), environmentally friendly PV material, with ~2% power conversion efficiency (PCE) already demonstrated in corresponding devices. In this study, a two-step process (i.e., precursor sputter deposition followed by successive sulfurization/selenization) yields high-quality nominally pinhole-free films with large (>1 µm) grains of selenium-incorporated (x = 3) Cu2 BaSnS4-x Sex (CBTSSe) for high-efficiency PV devices. By incorporating Se in the sulfide film, absorber layers with 1.55 eV bandgap, ideal for single-junction PV, have been achieved within the CBTSSe trigonal structural family. The abrupt transition in quantum efficiency data for wavelengths above the absorption edge, coupled with a strong sharp photoluminescence feature, confirms the relative absence of band tailing in CBTSSe compared to CZTSSe. For the first time, by combining bandgap tuning with an air-annealing step, a CBTSSe-based PV device with 5.2% PCE (total area 0.425 cm2 ) is reported, >2.5× better than the previous champion pure sulfide device. These results suggest substantial promise for the emerging Se-rich Cu2 BaSnS4-x Sex family for high-efficiency and earth-abundant PV.

Duke Scholars

Published In

Advanced materials (Deerfield Beach, Fla.)

DOI

EISSN

1521-4095

ISSN

0935-9648

Publication Date

June 2017

Volume

29

Issue

24

Related Subject Headings

  • Nanoscience & Nanotechnology
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 09 Engineering
  • 03 Chemical Sciences
  • 02 Physical Sciences
 

Citation

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Shin, D., Zhu, T., Huang, X., Gunawan, O., Blum, V., & Mitzi, D. B. (2017). Earth-Abundant Chalcogenide Photovoltaic Devices with over 5% Efficiency Based on a Cu2 BaSn(S,Se)4 Absorber. Advanced Materials (Deerfield Beach, Fla.), 29(24). https://doi.org/10.1002/adma.201606945
Shin, Donghyeop, Tong Zhu, Xuan Huang, Oki Gunawan, Volker Blum, and David B. Mitzi. “Earth-Abundant Chalcogenide Photovoltaic Devices with over 5% Efficiency Based on a Cu2 BaSn(S,Se)4 Absorber.Advanced Materials (Deerfield Beach, Fla.) 29, no. 24 (June 2017). https://doi.org/10.1002/adma.201606945.
Shin D, Zhu T, Huang X, Gunawan O, Blum V, Mitzi DB. Earth-Abundant Chalcogenide Photovoltaic Devices with over 5% Efficiency Based on a Cu2 BaSn(S,Se)4 Absorber. Advanced materials (Deerfield Beach, Fla). 2017 Jun;29(24).
Shin, Donghyeop, et al. “Earth-Abundant Chalcogenide Photovoltaic Devices with over 5% Efficiency Based on a Cu2 BaSn(S,Se)4 Absorber.Advanced Materials (Deerfield Beach, Fla.), vol. 29, no. 24, June 2017. Epmc, doi:10.1002/adma.201606945.
Shin D, Zhu T, Huang X, Gunawan O, Blum V, Mitzi DB. Earth-Abundant Chalcogenide Photovoltaic Devices with over 5% Efficiency Based on a Cu2 BaSn(S,Se)4 Absorber. Advanced materials (Deerfield Beach, Fla). 2017 Jun;29(24).
Journal cover image

Published In

Advanced materials (Deerfield Beach, Fla.)

DOI

EISSN

1521-4095

ISSN

0935-9648

Publication Date

June 2017

Volume

29

Issue

24

Related Subject Headings

  • Nanoscience & Nanotechnology
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 09 Engineering
  • 03 Chemical Sciences
  • 02 Physical Sciences