Spintronic memristor through spin-thorque-induced magnetization motion
Publication
, Journal Article
Wang, X; Chen, Y; Xi, H; Li, H; Dimitrov, D
Published in: IEEE Electron Device Letters
February 12, 2009
Existence of spintronic memristor in nanoscale is demonstrated based upon spin-torque-induced magnetization switching and magnetic-domain-wall motion. Our examples show that memristive effects are quite universal for spin-torque spintronic device at the time scale that explicitly involves the interactions between magnetization dynamics and electronic charge transport. We also proved that the spintronic device can be designed to explore and memorize the continuum state of current and voltage based on interactions of electron and spin transport. © 2009 IEEE.
Duke Scholars
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Published In
IEEE Electron Device Letters
DOI
ISSN
0741-3106
Publication Date
February 12, 2009
Volume
30
Issue
3
Start / End Page
294 / 297
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
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MLA
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Wang, X., Chen, Y., Xi, H., Li, H., & Dimitrov, D. (2009). Spintronic memristor through spin-thorque-induced magnetization motion. IEEE Electron Device Letters, 30(3), 294–297. https://doi.org/10.1109/LED.2008.2012270
Wang, X., Y. Chen, H. Xi, H. Li, and D. Dimitrov. “Spintronic memristor through spin-thorque-induced magnetization motion.” IEEE Electron Device Letters 30, no. 3 (February 12, 2009): 294–97. https://doi.org/10.1109/LED.2008.2012270.
Wang X, Chen Y, Xi H, Li H, Dimitrov D. Spintronic memristor through spin-thorque-induced magnetization motion. IEEE Electron Device Letters. 2009 Feb 12;30(3):294–7.
Wang, X., et al. “Spintronic memristor through spin-thorque-induced magnetization motion.” IEEE Electron Device Letters, vol. 30, no. 3, Feb. 2009, pp. 294–97. Scopus, doi:10.1109/LED.2008.2012270.
Wang X, Chen Y, Xi H, Li H, Dimitrov D. Spintronic memristor through spin-thorque-induced magnetization motion. IEEE Electron Device Letters. 2009 Feb 12;30(3):294–297.
Published In
IEEE Electron Device Letters
DOI
ISSN
0741-3106
Publication Date
February 12, 2009
Volume
30
Issue
3
Start / End Page
294 / 297
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering