Scholars@Duke

PCMO device with high switching stability

Publication ,  Journal Article
Chen, Y; Tian, W; Li, H; Wang, X; Zhu, W
Published in: IEEE Electron Device Letters
August 1, 2010
Published version (DOI)

We studied the relationship between the resistive-switching properties of the Pr0.7Ca0.3MnO3 (PCMO) thin-film elements and their geometry dimensions below submicrometers. Our electrical test results of a series of PCMO-based resistive-switching devices with different sizes show that switching voltages of ±2.5 V were achieved by reducing the PCMO layer thickness to 30 nm. In addition, the reduction of the PCMO layer thickness does not incur a significant impact upon the device reliability, i.e., no significant degradation of the two resistance states was observed after 1.5×103 programming cycles. © 2010 IEEE.

Duke Scholars

Yiran Chen
Author Yiran Chen Electrical and Computer Engineering
Hai "Helen" Li
Author Hai "Helen" Li Electrical and Computer Engineering

Published In

IEEE Electron Device Letters

DOI

10.1109/LED.2010.2050457

ISSN

0741-3106

Publication Date

August 1, 2010

Volume

31

Issue

8

Start / End Page

866 / 868

Related Subject Headings

  • Applied Physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Chen, Y., Tian, W., Li, H., Wang, X., & Zhu, W. (2010). PCMO device with high switching stability. IEEE Electron Device Letters, 31(8), 866–868. https://doi.org/10.1109/LED.2010.2050457
Chen, Y., W. Tian, H. Li, X. Wang, and W. Zhu. “PCMO device with high switching stability.” IEEE Electron Device Letters 31, no. 8 (August 1, 2010): 866–68. https://doi.org/10.1109/LED.2010.2050457.
Chen Y, Tian W, Li H, Wang X, Zhu W. PCMO device with high switching stability. IEEE Electron Device Letters. 2010 Aug 1;31(8):866–8.
Chen, Y., et al. “PCMO device with high switching stability.” IEEE Electron Device Letters, vol. 31, no. 8, Aug. 2010, pp. 866–68. Scopus, doi:10.1109/LED.2010.2050457.
Chen Y, Tian W, Li H, Wang X, Zhu W. PCMO device with high switching stability. IEEE Electron Device Letters. 2010 Aug 1;31(8):866–868.

Published In

IEEE Electron Device Letters

DOI

10.1109/LED.2010.2050457

ISSN

0741-3106

Publication Date

August 1, 2010

Volume

31

Issue

8

Start / End Page

866 / 868

Related Subject Headings

  • Applied Physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering