Scholars@Duke publication: Current switching in MgO-based magnetic tunneling junctions

Current switching in MgO-based magnetic tunneling junctions

Publication , Journal Article

Zhu, W; Li, H; Chen, Y; Wang, X

Published in: IEEE Transactions on Magnetics

January 1, 2011

Spin-transfer induced magnetization switching in a MgO-based magnetic tunneling junction (MTJ) has been measured over a wide time range. It was found that the switching current response is asymmetric going from the high resistance state to the low resistance state and vice versa. This asymmetry must be taken into consideration to optimize the read-write margin for a 1T1R (single transistor, single MTJ) memory device design, especially since the driving current that the transistor can supply is also asymmetric. The MTJ and the transistor characteristics need to be adjusted so that the spin-transfer switching current asymmetry matches the transistor driving current asymmetry at the desired operating speed. A new device configuration is proposed to achieve this optimization. © 2006 IEEE.

Duke Scholars

Author Hai "Helen" Li Electrical and Computer Engineering

Author Yiran Chen Electrical and Computer Engineering

Published In

IEEE Transactions on Magnetics

DOI

10.1109/TMAG.2010.2085441

ISSN

0018-9464

Publication Date

January 1, 2011

Volume

Issue

1 PART 2

Start / End Page

156 / 160

Related Subject Headings

Applied Physics
51 Physical sciences
40 Engineering
09 Engineering
02 Physical Sciences

Citation

APA

Chicago

ICMJE

MLA

NLM

Zhu, W., Li, H., Chen, Y., & Wang, X. (2011). Current switching in MgO-based magnetic tunneling junctions. IEEE Transactions on Magnetics, 47(1 PART 2), 156–160. https://doi.org/10.1109/TMAG.2010.2085441

Zhu, W., H. Li, Y. Chen, and X. Wang. “Current switching in MgO-based magnetic tunneling junctions.” IEEE Transactions on Magnetics 47, no. 1 PART 2 (January 1, 2011): 156–60. https://doi.org/10.1109/TMAG.2010.2085441.

Zhu W, Li H, Chen Y, Wang X. Current switching in MgO-based magnetic tunneling junctions. IEEE Transactions on Magnetics. 2011 Jan 1;47(1 PART 2):156–60.

Zhu, W., et al. “Current switching in MgO-based magnetic tunneling junctions.” IEEE Transactions on Magnetics, vol. 47, no. 1 PART 2, Jan. 2011, pp. 156–60. Scopus, doi:10.1109/TMAG.2010.2085441.

Zhu W, Li H, Chen Y, Wang X. Current switching in MgO-based magnetic tunneling junctions. IEEE Transactions on Magnetics. 2011 Jan 1;47(1 PART 2):156–160.

Published In

IEEE Transactions on Magnetics

DOI

10.1109/TMAG.2010.2085441

ISSN

0018-9464

Publication Date

January 1, 2011

Volume

Issue

1 PART 2

Start / End Page

156 / 160

Related Subject Headings

Applied Physics
51 Physical sciences
40 Engineering
09 Engineering
02 Physical Sciences