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STT-RAM cell optimization considering MTJ and CMOS variations

Publication ,  Journal Article
Zhang, Y; Wang, X; Li, H; Chen, Y
Published in: IEEE Transactions on Magnetics
January 1, 2011

Spin-transfer torque random access memory (STT-RAM) becomes a promising technology for future computing systems for its fast access time, high density, nonvolatility, and small write current. However, like all the other nanotechnologies, STT-RAM suffers from process variations and environment fluctuations, which significantly affect the performance and stability of magnetic tunneling junction (MTJ) devices. In this study, we combine magnetic and circuit simulations to quantitatively analyze the impacts of MTJ and CMOS variations on the STT-RAM designs. Both bit-to-bit and cycle-by-cycle variations are considered. A robust STT-RAM design flow is also proposed. © 2011 IEEE.

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Published In

IEEE Transactions on Magnetics

DOI

ISSN

0018-9464

Publication Date

January 1, 2011

Volume

47

Issue

10

Start / End Page

2962 / 2965

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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Zhang, Y., Wang, X., Li, H., & Chen, Y. (2011). STT-RAM cell optimization considering MTJ and CMOS variations. IEEE Transactions on Magnetics, 47(10), 2962–2965. https://doi.org/10.1109/TMAG.2011.2158810
Zhang, Y., X. Wang, H. Li, and Y. Chen. “STT-RAM cell optimization considering MTJ and CMOS variations.” IEEE Transactions on Magnetics 47, no. 10 (January 1, 2011): 2962–65. https://doi.org/10.1109/TMAG.2011.2158810.
Zhang Y, Wang X, Li H, Chen Y. STT-RAM cell optimization considering MTJ and CMOS variations. IEEE Transactions on Magnetics. 2011 Jan 1;47(10):2962–5.
Zhang, Y., et al. “STT-RAM cell optimization considering MTJ and CMOS variations.” IEEE Transactions on Magnetics, vol. 47, no. 10, Jan. 2011, pp. 2962–65. Scopus, doi:10.1109/TMAG.2011.2158810.
Zhang Y, Wang X, Li H, Chen Y. STT-RAM cell optimization considering MTJ and CMOS variations. IEEE Transactions on Magnetics. 2011 Jan 1;47(10):2962–2965.

Published In

IEEE Transactions on Magnetics

DOI

ISSN

0018-9464

Publication Date

January 1, 2011

Volume

47

Issue

10

Start / End Page

2962 / 2965

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences