STT-RAM cell optimization considering MTJ and CMOS variations
Publication
, Journal Article
Zhang, Y; Wang, X; Li, H; Chen, Y
Published in: IEEE Transactions on Magnetics
January 1, 2011
Spin-transfer torque random access memory (STT-RAM) becomes a promising technology for future computing systems for its fast access time, high density, nonvolatility, and small write current. However, like all the other nanotechnologies, STT-RAM suffers from process variations and environment fluctuations, which significantly affect the performance and stability of magnetic tunneling junction (MTJ) devices. In this study, we combine magnetic and circuit simulations to quantitatively analyze the impacts of MTJ and CMOS variations on the STT-RAM designs. Both bit-to-bit and cycle-by-cycle variations are considered. A robust STT-RAM design flow is also proposed. © 2011 IEEE.
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Published In
IEEE Transactions on Magnetics
DOI
ISSN
0018-9464
Publication Date
January 1, 2011
Volume
47
Issue
10
Start / End Page
2962 / 2965
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
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Zhang, Y., Wang, X., Li, H., & Chen, Y. (2011). STT-RAM cell optimization considering MTJ and CMOS variations. IEEE Transactions on Magnetics, 47(10), 2962–2965. https://doi.org/10.1109/TMAG.2011.2158810
Zhang, Y., X. Wang, H. Li, and Y. Chen. “STT-RAM cell optimization considering MTJ and CMOS variations.” IEEE Transactions on Magnetics 47, no. 10 (January 1, 2011): 2962–65. https://doi.org/10.1109/TMAG.2011.2158810.
Zhang Y, Wang X, Li H, Chen Y. STT-RAM cell optimization considering MTJ and CMOS variations. IEEE Transactions on Magnetics. 2011 Jan 1;47(10):2962–5.
Zhang, Y., et al. “STT-RAM cell optimization considering MTJ and CMOS variations.” IEEE Transactions on Magnetics, vol. 47, no. 10, Jan. 2011, pp. 2962–65. Scopus, doi:10.1109/TMAG.2011.2158810.
Zhang Y, Wang X, Li H, Chen Y. STT-RAM cell optimization considering MTJ and CMOS variations. IEEE Transactions on Magnetics. 2011 Jan 1;47(10):2962–2965.
Published In
IEEE Transactions on Magnetics
DOI
ISSN
0018-9464
Publication Date
January 1, 2011
Volume
47
Issue
10
Start / End Page
2962 / 2965
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences