Skip to main content

3D-ICML: A 3D bipolar ReRAM design with interleaved complementary memory layers

Publication ,  Conference
Chen, YC; Li, H; Chen, Y; Pino, RE
Published in: Proceedings -Design, Automation and Test in Europe, DATE
May 31, 2011

Resistive random access memory (ReRAM) has been demonstrated as a promising non-volatile memory technology with features such as high density, low power, good scalability, easy fabrication and compatibility to the existing CMOS technology. The conventional three-dimensional (3D) bipolar ReRAM design usually stacks up multiple memory layers that are separated by isolation layers, e.g. Spin-on-Glass (SOG). In this paper, we propose a new 3D bipolar ReRAM design with interleaved complimentary memory layers (3D-ICML) which can form a memory island without any isolation. The set of metal wires between two adjacent memory layers in vertical direction can be shared. 3D-ICML design can reduce fabrication complexity and increase memory density. Meanwhile, multiple memory cells interconnected horizontally and vertically can be accessed at the same time, which dramatically increases the memory bandwidth. © 2011 EDAA.

Duke Scholars

Published In

Proceedings -Design, Automation and Test in Europe, DATE

ISSN

1530-1591

ISBN

9783981080179

Publication Date

May 31, 2011

Start / End Page

583 / 586
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Chen, Y. C., Li, H., Chen, Y., & Pino, R. E. (2011). 3D-ICML: A 3D bipolar ReRAM design with interleaved complementary memory layers. In Proceedings -Design, Automation and Test in Europe, DATE (pp. 583–586).
Chen, Y. C., H. Li, Y. Chen, and R. E. Pino. “3D-ICML: A 3D bipolar ReRAM design with interleaved complementary memory layers.” In Proceedings -Design, Automation and Test in Europe, DATE, 583–86, 2011.
Chen YC, Li H, Chen Y, Pino RE. 3D-ICML: A 3D bipolar ReRAM design with interleaved complementary memory layers. In: Proceedings -Design, Automation and Test in Europe, DATE. 2011. p. 583–6.
Chen, Y. C., et al. “3D-ICML: A 3D bipolar ReRAM design with interleaved complementary memory layers.” Proceedings -Design, Automation and Test in Europe, DATE, 2011, pp. 583–86.
Chen YC, Li H, Chen Y, Pino RE. 3D-ICML: A 3D bipolar ReRAM design with interleaved complementary memory layers. Proceedings -Design, Automation and Test in Europe, DATE. 2011. p. 583–586.

Published In

Proceedings -Design, Automation and Test in Europe, DATE

ISSN

1530-1591

ISBN

9783981080179

Publication Date

May 31, 2011

Start / End Page

583 / 586