Thermal-assisted spin transfer torque memory (STT-RAM) cell design exploration
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Li, H; Xi, H; Chen, Y; Stricklin, J; Wang, X; Zhang, T
Published in: Proceedings of the 2009 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2009
October 5, 2009
Thermal-assisted spin-transfer torque random access memory (STT-RAM) has been considered as a promising candidate of next-generation nonvolatile memory technology. We conducted finite element simulation on thermal dynamics in the programming process of thermal-assisted STT-RAM. Special attentions have been paid to the scalability and design space of the thermal-assist programming scheme by varying the memory element dimension and resistancearea product. We also provide systematic analysis and comparison between the thermal-assisted STT-RAM and standard STT-RAM. Discussions on the writeability and scalability of thermal-assisted STTRAM are also conducted. © 2009 IEEE.
Duke Scholars
Published In
Proceedings of the 2009 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2009
DOI
ISBN
9780769536842
Publication Date
October 5, 2009
Start / End Page
217 / 222
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Li, H., Xi, H., Chen, Y., Stricklin, J., Wang, X., & Zhang, T. (2009). Thermal-assisted spin transfer torque memory (STT-RAM) cell design exploration. In Proceedings of the 2009 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2009 (pp. 217–222). https://doi.org/10.1109/ISVLSI.2009.17
Li, H., H. Xi, Y. Chen, J. Stricklin, X. Wang, and T. Zhang. “Thermal-assisted spin transfer torque memory (STT-RAM) cell design exploration.” In Proceedings of the 2009 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2009, 217–22, 2009. https://doi.org/10.1109/ISVLSI.2009.17.
Li H, Xi H, Chen Y, Stricklin J, Wang X, Zhang T. Thermal-assisted spin transfer torque memory (STT-RAM) cell design exploration. In: Proceedings of the 2009 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2009. 2009. p. 217–22.
Li, H., et al. “Thermal-assisted spin transfer torque memory (STT-RAM) cell design exploration.” Proceedings of the 2009 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2009, 2009, pp. 217–22. Scopus, doi:10.1109/ISVLSI.2009.17.
Li H, Xi H, Chen Y, Stricklin J, Wang X, Zhang T. Thermal-assisted spin transfer torque memory (STT-RAM) cell design exploration. Proceedings of the 2009 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2009. 2009. p. 217–222.
Published In
Proceedings of the 2009 IEEE Computer Society Annual Symposium on VLSI, ISVLSI 2009
DOI
ISBN
9780769536842
Publication Date
October 5, 2009
Start / End Page
217 / 222