Applications of TMR devices in solid state circuits and systems
Publication
, Conference
Chen, Y; Li, H; Wang, X; Park, J
Published in: 2010 International SoC Design Conference, ISOCC 2010
December 1, 2010
Spintronic devices have recently attracted significant attentions in solid state circuit society as a promising device in the applications of nonvolatile memory and emerging circuit design, i.e., memristor-based system. In this paper, we introduce Tunneling magnetoresistance (TMR) device - a popular spintronic device structure and its applications in 1) multi-level cell memory design; 2) memristive devices (memristor); and 3) a special circuit design example - nondestructive self-reference sensing technology. ©2010 IEEE.
Duke Scholars
Published In
2010 International SoC Design Conference, ISOCC 2010
DOI
ISBN
9781424486335
Publication Date
December 1, 2010
Start / End Page
252 / 255
Citation
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Chen, Y., Li, H., Wang, X., & Park, J. (2010). Applications of TMR devices in solid state circuits and systems. In 2010 International SoC Design Conference, ISOCC 2010 (pp. 252–255). https://doi.org/10.1109/SOCDC.2010.5682923
Chen, Y., H. Li, X. Wang, and J. Park. “Applications of TMR devices in solid state circuits and systems.” In 2010 International SoC Design Conference, ISOCC 2010, 252–55, 2010. https://doi.org/10.1109/SOCDC.2010.5682923.
Chen Y, Li H, Wang X, Park J. Applications of TMR devices in solid state circuits and systems. In: 2010 International SoC Design Conference, ISOCC 2010. 2010. p. 252–5.
Chen, Y., et al. “Applications of TMR devices in solid state circuits and systems.” 2010 International SoC Design Conference, ISOCC 2010, 2010, pp. 252–55. Scopus, doi:10.1109/SOCDC.2010.5682923.
Chen Y, Li H, Wang X, Park J. Applications of TMR devices in solid state circuits and systems. 2010 International SoC Design Conference, ISOCC 2010. 2010. p. 252–255.
Published In
2010 International SoC Design Conference, ISOCC 2010
DOI
ISBN
9781424486335
Publication Date
December 1, 2010
Start / End Page
252 / 255