Design margin exploration of Spin-Torque Transfer RAM (SPRAM)
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Chen, Y; Wang, X; Li, H; Liu, H; Dimitrov, DV
Published in: Proceedings of the 9th International Symposium on Quality Electronic Design, ISQED 2008
August 25, 2008
We proposed a combined magnetic and circuit level technique to explore the design methodology of Spin-Torque Transfer RAM (SPRAM). A dynamic magnetic model of magnetic tunneling junction (MTJ), which is based upon measured spin torque induced magnetization switching behavior, is also proposed. The response of CMOS circuitry is characterized by SPICE and used as the input of our MTJ model to simulate the dynamic behavior of SPRAM cell. By using this technique, we explored the design margin of SPRAM cell with one-transistor-one-MTJ (1T1J) structure. Simulation results show that our technique can significantly reduce the design pessimism, compared to conventional SRPAM cell model. © 2008 IEEE.
Duke Scholars
Published In
Proceedings of the 9th International Symposium on Quality Electronic Design, ISQED 2008
DOI
ISBN
9780769531175
Publication Date
August 25, 2008
Start / End Page
684 / 690
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Chen, Y., Wang, X., Li, H., Liu, H., & Dimitrov, D. V. (2008). Design margin exploration of Spin-Torque Transfer RAM (SPRAM). In Proceedings of the 9th International Symposium on Quality Electronic Design, ISQED 2008 (pp. 684–690). https://doi.org/10.1109/ISQED.2008.4479820
Chen, Y., X. Wang, H. Li, H. Liu, and D. V. Dimitrov. “Design margin exploration of Spin-Torque Transfer RAM (SPRAM).” In Proceedings of the 9th International Symposium on Quality Electronic Design, ISQED 2008, 684–90, 2008. https://doi.org/10.1109/ISQED.2008.4479820.
Chen Y, Wang X, Li H, Liu H, Dimitrov DV. Design margin exploration of Spin-Torque Transfer RAM (SPRAM). In: Proceedings of the 9th International Symposium on Quality Electronic Design, ISQED 2008. 2008. p. 684–90.
Chen, Y., et al. “Design margin exploration of Spin-Torque Transfer RAM (SPRAM).” Proceedings of the 9th International Symposium on Quality Electronic Design, ISQED 2008, 2008, pp. 684–90. Scopus, doi:10.1109/ISQED.2008.4479820.
Chen Y, Wang X, Li H, Liu H, Dimitrov DV. Design margin exploration of Spin-Torque Transfer RAM (SPRAM). Proceedings of the 9th International Symposium on Quality Electronic Design, ISQED 2008. 2008. p. 684–690.
Published In
Proceedings of the 9th International Symposium on Quality Electronic Design, ISQED 2008
DOI
ISBN
9780769531175
Publication Date
August 25, 2008
Start / End Page
684 / 690