PSP-SOI: A surface potential based compact model of partially depleted SOI MOSFETs
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Wu, W; Li, X; Gildenblat, G; Workman, G; Veeraraghavan, S; McAndrew, C; Van Langevelde, R; Smit, GDJ; Scholten, AJ; Klaassen, DBM; Watts, J
Published in: Proceedings of the Custom Integrated Circuits Conference
January 1, 2007
This paper reports recent progress on partially depleted (PD) SOI modeling using a surface potential based approach. The new model, called PSP-SOI, Is formulated within the framework of the latest Industry standard bulk MOSFET model PSP. In addition to Its physics-based formulation and scalability Inherited from PSP, PSP-SOI captures SOI specific effects by Including a floating body simulation capability, a parasitic bipolar model, and self-heating. A nonlinear body resistance Is Included for modeling body-contacted SOI devices. The PSP-SOI model has been extensively tested on several PD/SOI technologies. ©2007 IEEE.
Duke Scholars
Published In
Proceedings of the Custom Integrated Circuits Conference
DOI
ISSN
0886-5930
ISBN
9781424407866
Publication Date
January 1, 2007
Start / End Page
41 / 48
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Wu, W., Li, X., Gildenblat, G., Workman, G., Veeraraghavan, S., McAndrew, C., … Watts, J. (2007). PSP-SOI: A surface potential based compact model of partially depleted SOI MOSFETs. In Proceedings of the Custom Integrated Circuits Conference (pp. 41–48). https://doi.org/10.1109/CICC.2007.4405678
Wu, W., X. Li, G. Gildenblat, G. Workman, S. Veeraraghavan, C. McAndrew, R. Van Langevelde, et al. “PSP-SOI: A surface potential based compact model of partially depleted SOI MOSFETs.” In Proceedings of the Custom Integrated Circuits Conference, 41–48, 2007. https://doi.org/10.1109/CICC.2007.4405678.
Wu W, Li X, Gildenblat G, Workman G, Veeraraghavan S, McAndrew C, et al. PSP-SOI: A surface potential based compact model of partially depleted SOI MOSFETs. In: Proceedings of the Custom Integrated Circuits Conference. 2007. p. 41–8.
Wu, W., et al. “PSP-SOI: A surface potential based compact model of partially depleted SOI MOSFETs.” Proceedings of the Custom Integrated Circuits Conference, 2007, pp. 41–48. Scopus, doi:10.1109/CICC.2007.4405678.
Wu W, Li X, Gildenblat G, Workman G, Veeraraghavan S, McAndrew C, Van Langevelde R, Smit GDJ, Scholten AJ, Klaassen DBM, Watts J. PSP-SOI: A surface potential based compact model of partially depleted SOI MOSFETs. Proceedings of the Custom Integrated Circuits Conference. 2007. p. 41–48.
Published In
Proceedings of the Custom Integrated Circuits Conference
DOI
ISSN
0886-5930
ISBN
9781424407866
Publication Date
January 1, 2007
Start / End Page
41 / 48