PSP-SOI: A surface potential based compact model of partially depleted SOI MOSFETs
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Wu, W; Li, X; Gildenblat, G; Workman, G; Veeraraghavan, S; McAndrew, C; Van Langevelde, R; Smit, GDJ; Scholten, AJ; Klaassen, DBM; Watts, J
Published in: Proceedings of the Custom Integrated Circuits Conference
January 1, 2007
This paper reports recent progress on partially depleted (PD) SOI modeling using a surface potential based approach. The new model, called PSP-SOI, Is formulated within the framework of the latest Industry standard bulk MOSFET model PSP. In addition to Its physics-based formulation and scalability Inherited from PSP, PSP-SOI captures SOI specific effects by Including a floating body simulation capability, a parasitic bipolar model, and self-heating. A nonlinear body resistance Is Included for modeling body-contacted SOI devices. The PSP-SOI model has been extensively tested on several PD/SOI technologies. ©2007 IEEE.
Duke Scholars
Published In
Proceedings of the Custom Integrated Circuits Conference
DOI
ISSN
0886-5930
Publication Date
January 1, 2007
Start / End Page
41 / 48
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Wu, W., Li, X., Gildenblat, G., Workman, G., Veeraraghavan, S., McAndrew, C., … Watts, J. (2007). PSP-SOI: A surface potential based compact model of partially depleted SOI MOSFETs. In Proceedings of the Custom Integrated Circuits Conference (pp. 41–48). https://doi.org/10.1109/CICC.2007.4405678
Published In
Proceedings of the Custom Integrated Circuits Conference
DOI
ISSN
0886-5930
Publication Date
January 1, 2007
Start / End Page
41 / 48