Statistical modeling with the PSP MOSFET model
Publication
, Journal Article
Li, X; McAndrew, CC; Wu, W; Chaudhry, S; Victory, J; Gildenblat, G
Published in: IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems
April 1, 2010
PSP and the backward propagation of variance (BPV) method are used to characterize the statistical variations of metal-oxide-semiconductor field effect transistors (MOSFETs). BPV statistical modeling of NMOS and PMOS devices is, for the first time, coupled by including self-consistent modeling of ring oscillator gate delays. Parasitic capacitances are included in the analysis. The proposed technique is validated using Monte-Carlo simulations and by comparison to experimental data from two technologies. © 2010 IEEE.
Duke Scholars
Published In
IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems
DOI
ISSN
0278-0070
Publication Date
April 1, 2010
Volume
29
Issue
4
Start / End Page
599 / 609
Related Subject Headings
- Computer Hardware & Architecture
- 4607 Graphics, augmented reality and games
- 4009 Electronics, sensors and digital hardware
- 1006 Computer Hardware
- 0906 Electrical and Electronic Engineering
Citation
APA
Chicago
ICMJE
MLA
NLM
Li, X., McAndrew, C. C., Wu, W., Chaudhry, S., Victory, J., & Gildenblat, G. (2010). Statistical modeling with the PSP MOSFET model. IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems, 29(4), 599–609. https://doi.org/10.1109/TCAD.2010.2042892
Li, X., C. C. McAndrew, W. Wu, S. Chaudhry, J. Victory, and G. Gildenblat. “Statistical modeling with the PSP MOSFET model.” IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems 29, no. 4 (April 1, 2010): 599–609. https://doi.org/10.1109/TCAD.2010.2042892.
Li X, McAndrew CC, Wu W, Chaudhry S, Victory J, Gildenblat G. Statistical modeling with the PSP MOSFET model. IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems. 2010 Apr 1;29(4):599–609.
Li, X., et al. “Statistical modeling with the PSP MOSFET model.” IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems, vol. 29, no. 4, Apr. 2010, pp. 599–609. Scopus, doi:10.1109/TCAD.2010.2042892.
Li X, McAndrew CC, Wu W, Chaudhry S, Victory J, Gildenblat G. Statistical modeling with the PSP MOSFET model. IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems. 2010 Apr 1;29(4):599–609.
Published In
IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems
DOI
ISSN
0278-0070
Publication Date
April 1, 2010
Volume
29
Issue
4
Start / End Page
599 / 609
Related Subject Headings
- Computer Hardware & Architecture
- 4607 Graphics, augmented reality and games
- 4009 Electronics, sensors and digital hardware
- 1006 Computer Hardware
- 0906 Electrical and Electronic Engineering