Statistical modeling with the PSP MOSFET model
Publication
, Journal Article
Li, X; McAndrew, CC; Wu, W; Chaudhry, S; Victory, J; Gildenblat, G
Published in: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
April 1, 2010
PSP and the backward propagation of variance (BPV) method are used to characterize the statistical variations of metal-oxide-semiconductor field effect transistors (MOSFETs). BPV statistical modeling of NMOS and PMOS devices is, for the first time, coupled by including self-consistent modeling of ring oscillator gate delays. Parasitic capacitances are included in the analysis. The proposed technique is validated using Monte-Carlo simulations and by comparison to experimental data from two technologies. © 2010 IEEE.
Duke Scholars
Published In
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
DOI
ISSN
0278-0070
Publication Date
April 1, 2010
Volume
29
Issue
4
Start / End Page
599 / 609
Related Subject Headings
- Computer Hardware & Architecture
- 4607 Graphics, augmented reality and games
- 4009 Electronics, sensors and digital hardware
- 1006 Computer Hardware
- 0906 Electrical and Electronic Engineering
Citation
APA
Chicago
ICMJE
MLA
NLM
Li, X., McAndrew, C. C., Wu, W., Chaudhry, S., Victory, J., & Gildenblat, G. (2010). Statistical modeling with the PSP MOSFET model. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 29(4), 599–609. https://doi.org/10.1109/TCAD.2010.2042892
Li, X., C. C. McAndrew, W. Wu, S. Chaudhry, J. Victory, and G. Gildenblat. “Statistical modeling with the PSP MOSFET model.” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 29, no. 4 (April 1, 2010): 599–609. https://doi.org/10.1109/TCAD.2010.2042892.
Li X, McAndrew CC, Wu W, Chaudhry S, Victory J, Gildenblat G. Statistical modeling with the PSP MOSFET model. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 2010 Apr 1;29(4):599–609.
Li, X., et al. “Statistical modeling with the PSP MOSFET model.” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 29, no. 4, Apr. 2010, pp. 599–609. Scopus, doi:10.1109/TCAD.2010.2042892.
Li X, McAndrew CC, Wu W, Chaudhry S, Victory J, Gildenblat G. Statistical modeling with the PSP MOSFET model. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 2010 Apr 1;29(4):599–609.
Published In
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
DOI
ISSN
0278-0070
Publication Date
April 1, 2010
Volume
29
Issue
4
Start / End Page
599 / 609
Related Subject Headings
- Computer Hardware & Architecture
- 4607 Graphics, augmented reality and games
- 4009 Electronics, sensors and digital hardware
- 1006 Computer Hardware
- 0906 Electrical and Electronic Engineering