Understanding the trade-offs of device, circuit and application in ReRAM-based neuromorphic computing systems
Publication
, Conference
Yan, B; Liu, C; Liu, X; Chen, Y; Li, H
Published in: Technical Digest - International Electron Devices Meeting, IEDM
January 23, 2018
Resistive memory (ReRAM) features nonvolatile storage, high resistance, dense structure, and analogy to the matrix-vector multiplication operation. These characteristics demonstrate the great potential of ReRAM in the development of neuromorphic computing systems. In this paper, we show the importance of the comprehensive understanding across the device, circuit, and application levels in ReRAM-based neuromorphic system, through the discussion of three major problems-weight mapping, reliability, and system integration.
Duke Scholars
Published In
Technical Digest - International Electron Devices Meeting, IEDM
DOI
ISSN
0163-1918
Publication Date
January 23, 2018
Start / End Page
11.4.1 / 11.4.4
Citation
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Yan, B., Liu, C., Liu, X., Chen, Y., & Li, H. (2018). Understanding the trade-offs of device, circuit and application in ReRAM-based neuromorphic computing systems. In Technical Digest - International Electron Devices Meeting, IEDM (pp. 11.4.1-11.4.4). https://doi.org/10.1109/IEDM.2017.8268371
Yan, B., C. Liu, X. Liu, Y. Chen, and H. Li. “Understanding the trade-offs of device, circuit and application in ReRAM-based neuromorphic computing systems.” In Technical Digest - International Electron Devices Meeting, IEDM, 11.4.1-11.4.4, 2018. https://doi.org/10.1109/IEDM.2017.8268371.
Yan B, Liu C, Liu X, Chen Y, Li H. Understanding the trade-offs of device, circuit and application in ReRAM-based neuromorphic computing systems. In: Technical Digest - International Electron Devices Meeting, IEDM. 2018. p. 11.4.1-11.4.4.
Yan, B., et al. “Understanding the trade-offs of device, circuit and application in ReRAM-based neuromorphic computing systems.” Technical Digest - International Electron Devices Meeting, IEDM, 2018, pp. 11.4.1-11.4.4. Scopus, doi:10.1109/IEDM.2017.8268371.
Yan B, Liu C, Liu X, Chen Y, Li H. Understanding the trade-offs of device, circuit and application in ReRAM-based neuromorphic computing systems. Technical Digest - International Electron Devices Meeting, IEDM. 2018. p. 11.4.1-11.4.4.
Published In
Technical Digest - International Electron Devices Meeting, IEDM
DOI
ISSN
0163-1918
Publication Date
January 23, 2018
Start / End Page
11.4.1 / 11.4.4