Design and Implementation of a 4Kb STT-MRAM with Innovative 200nm Nano-ring Shaped MTJ
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Li, Z; Bi, X; Li, HH; Chen, Y; Qin, J; Guo, P; Kong, W; Zhan, W; Han, X; Zhang, H; Wang, L; Wu, G; Wu, H
Published in: Proceedings of the International Symposium on Low Power Electronics and Design
August 8, 2016
Programmability is as a severe challenge in development of spin-transfer torque magnetic random access memory (STT-MRAM). Theoretical analysis have indicated that nano-ring shaped magnetic tunneling junction (NR-MTJ) can achieve lower write current and higher write reliability compared to conventional elliptical-shaped MTJ (E-MTJ). In this work, we successfully patterned the NR-MTJ with 200nm outer diameter and 120nm inner diameter in commercial manufacturing facility, designed and fabricated a 4Kb STT-MRAM test chip with NR-MTJs. Testing results demonstrated successful read and write functionalities of our chip, and proved the theocratically-predicted electrical properties of NR-MTJs.
Duke Scholars
Published In
Proceedings of the International Symposium on Low Power Electronics and Design
DOI
ISSN
1533-4678
Publication Date
August 8, 2016
Start / End Page
4 / 9
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Li, Z., Bi, X., Li, H. H., Chen, Y., Qin, J., Guo, P., … Wu, H. (2016). Design and Implementation of a 4Kb STT-MRAM with Innovative 200nm Nano-ring Shaped MTJ. In Proceedings of the International Symposium on Low Power Electronics and Design (pp. 4–9). https://doi.org/10.1145/2934583.2934611
Li, Z., X. Bi, H. H. Li, Y. Chen, J. Qin, P. Guo, W. Kong, et al. “Design and Implementation of a 4Kb STT-MRAM with Innovative 200nm Nano-ring Shaped MTJ.” In Proceedings of the International Symposium on Low Power Electronics and Design, 4–9, 2016. https://doi.org/10.1145/2934583.2934611.
Li Z, Bi X, Li HH, Chen Y, Qin J, Guo P, et al. Design and Implementation of a 4Kb STT-MRAM with Innovative 200nm Nano-ring Shaped MTJ. In: Proceedings of the International Symposium on Low Power Electronics and Design. 2016. p. 4–9.
Li, Z., et al. “Design and Implementation of a 4Kb STT-MRAM with Innovative 200nm Nano-ring Shaped MTJ.” Proceedings of the International Symposium on Low Power Electronics and Design, 2016, pp. 4–9. Scopus, doi:10.1145/2934583.2934611.
Li Z, Bi X, Li HH, Chen Y, Qin J, Guo P, Kong W, Zhan W, Han X, Zhang H, Wang L, Wu G, Wu H. Design and Implementation of a 4Kb STT-MRAM with Innovative 200nm Nano-ring Shaped MTJ. Proceedings of the International Symposium on Low Power Electronics and Design. 2016. p. 4–9.
Published In
Proceedings of the International Symposium on Low Power Electronics and Design
DOI
ISSN
1533-4678
Publication Date
August 8, 2016
Start / End Page
4 / 9