Scholars@Duke

The AlInAs-GaInAs HEMT for Microwave and Millimeter-Wave Applications

Publication ,  Journal Article
Mishra, UK; Brown, AS; Delaney, MJ; Greiling, PT; Krumm, CF
Published in: IEEE Transactions on Microwave Theory and Techniques
January 1, 1989
Published version (DOI)

This paper reviews the status of lattice-matched and pseudomorphic AHnAs-GaInAs HEMPs grown on InP substrates. The best lattice-matched devices with 0.1 μm gate length had a transconductance gm = 1080 mS/mm and unity current gain cutoff frequency fT = 178 GHz, whereas similar pseudomorphic HEMTs had gm = 1160 mS/mm and fT = 210 GHz. Single-stage V-band amplifiers demonstrated 1.3 and 1.5 dB noise figures and 9.5 and 8.0 dB associated gains for the lattice-matched and pseudomorphic HEMPs, respectively. The best performance achieved was Fmin = 0.8 dB with Ga = 8.7 dB. © 1989 IEEE

Duke Scholars

April S. Brown
Author April S. Brown Electrical and Computer Engineering
Altmetric Attention Stats
Dimensions Citation Stats

Published In

IEEE Transactions on Microwave Theory and Techniques

DOI

10.1109/22.32210

EISSN

1557-9670

ISSN

0018-9480

Publication Date

January 1, 1989

Volume

37

Issue

9

Start / End Page

1279 / 1285

Related Subject Headings

  • Networking & Telecommunications
  • 1005 Communications Technologies
  • 0906 Electrical and Electronic Engineering
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Mishra, U. K., Brown, A. S., Delaney, M. J., Greiling, P. T., & Krumm, C. F. (1989). The AlInAs-GaInAs HEMT for Microwave and Millimeter-Wave Applications. IEEE Transactions on Microwave Theory and Techniques, 37(9), 1279–1285. https://doi.org/10.1109/22.32210
Mishra, U. K., A. S. Brown, M. J. Delaney, P. T. Greiling, and C. F. Krumm. “The AlInAs-GaInAs HEMT for Microwave and Millimeter-Wave Applications.” IEEE Transactions on Microwave Theory and Techniques 37, no. 9 (January 1, 1989): 1279–85. https://doi.org/10.1109/22.32210.
Mishra UK, Brown AS, Delaney MJ, Greiling PT, Krumm CF. The AlInAs-GaInAs HEMT for Microwave and Millimeter-Wave Applications. IEEE Transactions on Microwave Theory and Techniques. 1989 Jan 1;37(9):1279–85.
Mishra, U. K., et al. “The AlInAs-GaInAs HEMT for Microwave and Millimeter-Wave Applications.” IEEE Transactions on Microwave Theory and Techniques, vol. 37, no. 9, Jan. 1989, pp. 1279–85. Scopus, doi:10.1109/22.32210.
Mishra UK, Brown AS, Delaney MJ, Greiling PT, Krumm CF. The AlInAs-GaInAs HEMT for Microwave and Millimeter-Wave Applications. IEEE Transactions on Microwave Theory and Techniques. 1989 Jan 1;37(9):1279–1285.

Published In

IEEE Transactions on Microwave Theory and Techniques

DOI

10.1109/22.32210

EISSN

1557-9670

ISSN

0018-9480

Publication Date

January 1, 1989

Volume

37

Issue

9

Start / End Page

1279 / 1285

Related Subject Headings

  • Networking & Telecommunications
  • 1005 Communications Technologies
  • 0906 Electrical and Electronic Engineering