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The AlInAs-GaInAs HEMT for Microwave and Millimeter-Wave Applications

Publication ,  Journal Article
Mishra, UK; Brown, AS; Delaney, MJ; Greiling, PT; Krumm, CF
Published in: IEEE Transactions on Microwave Theory and Techniques
January 1, 1989

This paper reviews the status of lattice-matched and pseudomorphic AHnAs-GaInAs HEMPs grown on InP substrates. The best lattice-matched devices with 0.1 μm gate length had a transconductance gm = 1080 mS/mm and unity current gain cutoff frequency fT = 178 GHz, whereas similar pseudomorphic HEMTs had gm = 1160 mS/mm and fT = 210 GHz. Single-stage V-band amplifiers demonstrated 1.3 and 1.5 dB noise figures and 9.5 and 8.0 dB associated gains for the lattice-matched and pseudomorphic HEMPs, respectively. The best performance achieved was Fmin = 0.8 dB with Ga = 8.7 dB. © 1989 IEEE

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Published In

IEEE Transactions on Microwave Theory and Techniques

DOI

EISSN

1557-9670

ISSN

0018-9480

Publication Date

January 1, 1989

Volume

37

Issue

9

Start / End Page

1279 / 1285

Related Subject Headings

  • Networking & Telecommunications
  • 5103 Classical physics
  • 1005 Communications Technologies
  • 0906 Electrical and Electronic Engineering
 

Citation

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Mishra, U. K., Brown, A. S., Delaney, M. J., Greiling, P. T., & Krumm, C. F. (1989). The AlInAs-GaInAs HEMT for Microwave and Millimeter-Wave Applications. IEEE Transactions on Microwave Theory and Techniques, 37(9), 1279–1285. https://doi.org/10.1109/22.32210
Mishra, U. K., A. S. Brown, M. J. Delaney, P. T. Greiling, and C. F. Krumm. “The AlInAs-GaInAs HEMT for Microwave and Millimeter-Wave Applications.” IEEE Transactions on Microwave Theory and Techniques 37, no. 9 (January 1, 1989): 1279–85. https://doi.org/10.1109/22.32210.
Mishra UK, Brown AS, Delaney MJ, Greiling PT, Krumm CF. The AlInAs-GaInAs HEMT for Microwave and Millimeter-Wave Applications. IEEE Transactions on Microwave Theory and Techniques. 1989 Jan 1;37(9):1279–85.
Mishra, U. K., et al. “The AlInAs-GaInAs HEMT for Microwave and Millimeter-Wave Applications.” IEEE Transactions on Microwave Theory and Techniques, vol. 37, no. 9, Jan. 1989, pp. 1279–85. Scopus, doi:10.1109/22.32210.
Mishra UK, Brown AS, Delaney MJ, Greiling PT, Krumm CF. The AlInAs-GaInAs HEMT for Microwave and Millimeter-Wave Applications. IEEE Transactions on Microwave Theory and Techniques. 1989 Jan 1;37(9):1279–1285.

Published In

IEEE Transactions on Microwave Theory and Techniques

DOI

EISSN

1557-9670

ISSN

0018-9480

Publication Date

January 1, 1989

Volume

37

Issue

9

Start / End Page

1279 / 1285

Related Subject Headings

  • Networking & Telecommunications
  • 5103 Classical physics
  • 1005 Communications Technologies
  • 0906 Electrical and Electronic Engineering