Transfer of patterns from the backside of a silicon wafer coated with Si3 N4 to its front surface during wet oxidation
Publication
, Journal Article
Rogers, WB; Massoud, HZ
Published in: Applied Physics Letters
December 1, 1989
Patterns on the backside of silicon wafers coated with Si3N 4 films have been observed on their front surfaces after wet oxidation. This pattern transfer phenomenon is the result of a reduction in the oxidation rate of the front-surface nitride film over areas where the backside films have been removed. This reduction has been attributed to the influence of the stress in the nitride film on its oxidation rate. In areas where the backside nitride has been removed, localized sample bowing results in stress relief in the front-surface film and a lower oxidation rate of the nitride film.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1989
Volume
55
Issue
2
Start / End Page
159 / 161
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
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ICMJE
MLA
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Rogers, W. B., & Massoud, H. Z. (1989). Transfer of patterns from the backside of a silicon wafer coated with Si3 N4 to its front surface during wet oxidation. Applied Physics Letters, 55(2), 159–161. https://doi.org/10.1063/1.102398
Rogers, W. B., and H. Z. Massoud. “Transfer of patterns from the backside of a silicon wafer coated with Si3 N4 to its front surface during wet oxidation.” Applied Physics Letters 55, no. 2 (December 1, 1989): 159–61. https://doi.org/10.1063/1.102398.
Rogers WB, Massoud HZ. Transfer of patterns from the backside of a silicon wafer coated with Si3 N4 to its front surface during wet oxidation. Applied Physics Letters. 1989 Dec 1;55(2):159–61.
Rogers, W. B., and H. Z. Massoud. “Transfer of patterns from the backside of a silicon wafer coated with Si3 N4 to its front surface during wet oxidation.” Applied Physics Letters, vol. 55, no. 2, Dec. 1989, pp. 159–61. Scopus, doi:10.1063/1.102398.
Rogers WB, Massoud HZ. Transfer of patterns from the backside of a silicon wafer coated with Si3 N4 to its front surface during wet oxidation. Applied Physics Letters. 1989 Dec 1;55(2):159–161.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1989
Volume
55
Issue
2
Start / End Page
159 / 161
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences