Scholars@Duke publication: Transfer of patterns from the backside of a silicon wafer coated with Si3N4 to its front surface during wet oxidation

Transfer of patterns from the backside of a silicon wafer coated with Si3N4 to its front surface during wet oxidation

Journal articles - Journal Article

Rogers, WB; Massoud, HZ

Published in: Applied Physics Letters

December 1, 1989

Patterns on the backside of silicon wafers coated with Si3N 4 films have been observed on their front surfaces after wet oxidation. This pattern transfer phenomenon is the result of a reduction in the oxidation rate of the front-surface nitride film over areas where the backside films have been removed. This reduction has been attributed to the influence of the stress in the nitride film on its oxidation rate. In areas where the backside nitride has been removed, localized sample bowing results in stress relief in the front-surface film and a lower oxidation rate of the nitride film.

Duke Scholars

Author Hisham Z. Massoud Pierre R. Lamond Department of Electrical and Computer Engin ...

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Published In

Applied Physics Letters

DOI

10.1063/1.102398

ISSN

0003-6951

Publication Date

December 1, 1989

Volume

Issue

Start / End Page

159 / 161

Related Subject Headings

Applied Physics
51 Physical sciences
40 Engineering

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Rogers, W. B., & Massoud, H. Z. (1989). Transfer of patterns from the backside of a silicon wafer coated with Si3N4 to its front surface during wet oxidation. Applied Physics Letters, 55(2), 159–161. https://doi.org/10.1063/1.102398

Rogers, W. B., and H. Z. Massoud. “Transfer of patterns from the backside of a silicon wafer coated with Si3N4 to its front surface during wet oxidation.” Applied Physics Letters 55, no. 2 (December 1, 1989): 159–61. https://doi.org/10.1063/1.102398.

Rogers WB, Massoud HZ. Transfer of patterns from the backside of a silicon wafer coated with Si3N4 to its front surface during wet oxidation. Applied Physics Letters. 1989 Dec 1;55(2):159–61.

Rogers, W. B., and H. Z. Massoud. “Transfer of patterns from the backside of a silicon wafer coated with Si3N4 to its front surface during wet oxidation.” Applied Physics Letters, vol. 55, no. 2, Dec. 1989, pp. 159–61. Scopus, doi:10.1063/1.102398.

Rogers WB, Massoud HZ. Transfer of patterns from the backside of a silicon wafer coated with Si3N4 to its front surface during wet oxidation. Applied Physics Letters. 1989 Dec 1;55(2):159–161.

Published In

Applied Physics Letters

DOI

10.1063/1.102398

ISSN

0003-6951

Publication Date

December 1, 1989

Volume

Issue

Start / End Page

159 / 161

Related Subject Headings

Applied Physics
51 Physical sciences
40 Engineering