The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon
Publication
, Journal Article
Subrahmanyan, R; Massoud, HZ; Fair, RB
Published in: Journal of Applied Physics
December 1, 1987
The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon has been studied. Experimental data at 1000, 1100, and 1150 °C were obtained using secondary ion mass spectrometry (SIMS). A previously proposed empirical model was used in analyzing the impurity profiles, and the parameters of this model were determined by matching the computer simulations of dopant diffusion with the SIMS profiles. The dependence of the model parameters on temperature and HCl concentration is discussed.
Duke Scholars
Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
December 1, 1987
Volume
61
Issue
10
Start / End Page
4804 / 4807
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences
Citation
APA
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ICMJE
MLA
NLM
Subrahmanyan, R., Massoud, H. Z., & Fair, R. B. (1987). The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon. Journal of Applied Physics, 61(10), 4804–4807. https://doi.org/10.1063/1.338342
Subrahmanyan, R., H. Z. Massoud, and R. B. Fair. “The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon.” Journal of Applied Physics 61, no. 10 (December 1, 1987): 4804–7. https://doi.org/10.1063/1.338342.
Subrahmanyan R, Massoud HZ, Fair RB. The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon. Journal of Applied Physics. 1987 Dec 1;61(10):4804–7.
Subrahmanyan, R., et al. “The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon.” Journal of Applied Physics, vol. 61, no. 10, Dec. 1987, pp. 4804–07. Scopus, doi:10.1063/1.338342.
Subrahmanyan R, Massoud HZ, Fair RB. The influence of HCl on the oxidation-enhanced diffusion of boron and arsenic in silicon. Journal of Applied Physics. 1987 Dec 1;61(10):4804–4807.
Published In
Journal of Applied Physics
DOI
ISSN
0021-8979
Publication Date
December 1, 1987
Volume
61
Issue
10
Start / End Page
4804 / 4807
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 49 Mathematical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
- 01 Mathematical Sciences