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Explanation of anomalous base regions in transistors

Publication ,  Journal Article
Fair, RB
Published in: Applied Physics Letters
December 1, 1973

The recent experimental results of Ziegler, Cole, and Baglin showed that in sequentially diffused boron-arsenic npn silicon transistors, an unexplained depletion of boron occurs near the emitter-base junction. This depletion effect could have an appreciable influence on transistor characteristics. A quantitative explanation is shown to exist, based upon the retarded base diffusion theory of Fair. The full-profile experimental results of Ziegler et al. are shown to be accurately described by solutions to the coupled AsSingle Bond signB diffusion equations when the junction electric field effect and the vacancy undersaturation condition created by VsiAs2 complex formation are taken into account. © 1973 American Institute of Physics.

Duke Scholars

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

December 1, 1973

Volume

22

Issue

4

Start / End Page

186 / 187

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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Fair, R. B. (1973). Explanation of anomalous base regions in transistors. Applied Physics Letters, 22(4), 186–187. https://doi.org/10.1063/1.1654604
Fair, R. B. “Explanation of anomalous base regions in transistors.” Applied Physics Letters 22, no. 4 (December 1, 1973): 186–87. https://doi.org/10.1063/1.1654604.
Fair RB. Explanation of anomalous base regions in transistors. Applied Physics Letters. 1973 Dec 1;22(4):186–7.
Fair, R. B. “Explanation of anomalous base regions in transistors.” Applied Physics Letters, vol. 22, no. 4, Dec. 1973, pp. 186–87. Scopus, doi:10.1063/1.1654604.
Fair RB. Explanation of anomalous base regions in transistors. Applied Physics Letters. 1973 Dec 1;22(4):186–187.

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

December 1, 1973

Volume

22

Issue

4

Start / End Page

186 / 187

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences