Explanation of anomalous base regions in transistors
Publication
, Journal Article
Fair, RB
Published in: Applied Physics Letters
December 1, 1973
The recent experimental results of Ziegler, Cole, and Baglin showed that in sequentially diffused boron-arsenic npn silicon transistors, an unexplained depletion of boron occurs near the emitter-base junction. This depletion effect could have an appreciable influence on transistor characteristics. A quantitative explanation is shown to exist, based upon the retarded base diffusion theory of Fair. The full-profile experimental results of Ziegler et al. are shown to be accurately described by solutions to the coupled AsSingle Bond signB diffusion equations when the junction electric field effect and the vacancy undersaturation condition created by VsiAs2 complex formation are taken into account. © 1973 American Institute of Physics.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1973
Volume
22
Issue
4
Start / End Page
186 / 187
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Fair, R. B. (1973). Explanation of anomalous base regions in transistors. Applied Physics Letters, 22(4), 186–187. https://doi.org/10.1063/1.1654604
Fair, R. B. “Explanation of anomalous base regions in transistors.” Applied Physics Letters 22, no. 4 (December 1, 1973): 186–87. https://doi.org/10.1063/1.1654604.
Fair RB. Explanation of anomalous base regions in transistors. Applied Physics Letters. 1973 Dec 1;22(4):186–7.
Fair, R. B. “Explanation of anomalous base regions in transistors.” Applied Physics Letters, vol. 22, no. 4, Dec. 1973, pp. 186–87. Scopus, doi:10.1063/1.1654604.
Fair RB. Explanation of anomalous base regions in transistors. Applied Physics Letters. 1973 Dec 1;22(4):186–187.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1973
Volume
22
Issue
4
Start / End Page
186 / 187
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences