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ZENER AND AVALANCHE BREAKDOWN IN As-IMPLANTED LOW-VOLTAGE Si n-p JUNCTIONS.

Publication ,  Journal Article
Fair, RB; Wivell, HW
Published in: IEEE Transactions on Electron Devices
1976

Following a verification of the calculated I-V curves and their temperature dependence as a function of grade constant, calculated curves are presented which correlate As implant dose and diffusion with junction breakdown voltage, breakdown impedance, and temperature coefficient of reverse voltage. The temperature coefficient is shown to change from negative to positive as the transition from tunneling to avalanche occurs. In addition, the relative importance of tunneling and multiplied-generation current as a function of current density is elucidated for any particular As layer grade constant.

Duke Scholars

Published In

IEEE Transactions on Electron Devices

Publication Date

1976

Volume

ED-23

Issue

5

Start / End Page

512 / 518

Related Subject Headings

  • Applied Physics
  • 0906 Electrical and Electronic Engineering
 

Citation

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MLA
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Fair, R. B., & Wivell, H. W. (1976). ZENER AND AVALANCHE BREAKDOWN IN As-IMPLANTED LOW-VOLTAGE Si n-p JUNCTIONS. IEEE Transactions on Electron Devices, ED-23(5), 512–518.
Fair, R. B., and H. W. Wivell. “ZENER AND AVALANCHE BREAKDOWN IN As-IMPLANTED LOW-VOLTAGE Si n-p JUNCTIONS.IEEE Transactions on Electron Devices ED-23, no. 5 (1976): 512–18.
Fair RB, Wivell HW. ZENER AND AVALANCHE BREAKDOWN IN As-IMPLANTED LOW-VOLTAGE Si n-p JUNCTIONS. IEEE Transactions on Electron Devices. 1976;ED-23(5):512–8.
Fair, R. B., and H. W. Wivell. “ZENER AND AVALANCHE BREAKDOWN IN As-IMPLANTED LOW-VOLTAGE Si n-p JUNCTIONS.IEEE Transactions on Electron Devices, vol. ED-23, no. 5, 1976, pp. 512–18.
Fair RB, Wivell HW. ZENER AND AVALANCHE BREAKDOWN IN As-IMPLANTED LOW-VOLTAGE Si n-p JUNCTIONS. IEEE Transactions on Electron Devices. 1976;ED-23(5):512–518.

Published In

IEEE Transactions on Electron Devices

Publication Date

1976

Volume

ED-23

Issue

5

Start / End Page

512 / 518

Related Subject Headings

  • Applied Physics
  • 0906 Electrical and Electronic Engineering