Subquarter-mícrometre elevated source-and-drain MOSFET structure using polysilicon spacers
Publication
, Journal Article
Mirabedini, RR; Goodwin-Johansson, SH; Massoud, HZ; Fair, RB
Published in: Electronics Letters
January 1, 1994
A novel subquarter-micrometre MOSFET with a selfaligned source and drain, structure is proposed with elevated sources and drains formed by using polysilicon spacers. The spacers can reduce the effective channel length by 50% compared to the mask length, and reduce the junction capacitance by over 30% through a reduction in junction area, as shown by PISCES simulations. A graded oxide spacer is used to decrease the parasitic gate-to-drain capacitance. © 1994, IEE. All rights reserved.
Duke Scholars
Published In
Electronics Letters
DOI
ISSN
0013-5194
Publication Date
January 1, 1994
Volume
30
Issue
19
Start / End Page
1631 / 1632
Related Subject Headings
- Electrical & Electronic Engineering
- 4009 Electronics, sensors and digital hardware
- 4006 Communications engineering
- 1005 Communications Technologies
- 0906 Electrical and Electronic Engineering
- 0801 Artificial Intelligence and Image Processing
Citation
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ICMJE
MLA
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Mirabedini, R. R., Goodwin-Johansson, S. H., Massoud, H. Z., & Fair, R. B. (1994). Subquarter-mícrometre elevated source-and-drain MOSFET structure using polysilicon spacers. Electronics Letters, 30(19), 1631–1632. https://doi.org/10.1049/el:19941068
Mirabedini, R. R., S. H. Goodwin-Johansson, H. Z. Massoud, and R. B. Fair. “Subquarter-mícrometre elevated source-and-drain MOSFET structure using polysilicon spacers.” Electronics Letters 30, no. 19 (January 1, 1994): 1631–32. https://doi.org/10.1049/el:19941068.
Mirabedini RR, Goodwin-Johansson SH, Massoud HZ, Fair RB. Subquarter-mícrometre elevated source-and-drain MOSFET structure using polysilicon spacers. Electronics Letters. 1994 Jan 1;30(19):1631–2.
Mirabedini, R. R., et al. “Subquarter-mícrometre elevated source-and-drain MOSFET structure using polysilicon spacers.” Electronics Letters, vol. 30, no. 19, Jan. 1994, pp. 1631–32. Scopus, doi:10.1049/el:19941068.
Mirabedini RR, Goodwin-Johansson SH, Massoud HZ, Fair RB. Subquarter-mícrometre elevated source-and-drain MOSFET structure using polysilicon spacers. Electronics Letters. 1994 Jan 1;30(19):1631–1632.
Published In
Electronics Letters
DOI
ISSN
0013-5194
Publication Date
January 1, 1994
Volume
30
Issue
19
Start / End Page
1631 / 1632
Related Subject Headings
- Electrical & Electronic Engineering
- 4009 Electronics, sensors and digital hardware
- 4006 Communications engineering
- 1005 Communications Technologies
- 0906 Electrical and Electronic Engineering
- 0801 Artificial Intelligence and Image Processing