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The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation

Publication ,  Journal Article
Kim, Y; Massoud, HZ; Fair, RB
Published in: Journal of Electronic Materials
March 1, 1989

Low-thermal-budget annealing of ion-implanted BF 2 +, P, and As in Si was studied for shallow-junction formation. Implant doses were sufficient to amorphize the silicon surface region. Low-temperature furnace annealing and rapid-thermal annealing of ionimplanted boron, phosphorus and arsenic in silicon exhibit a transient enhanced diffusion regime resulting injunction depths considerably deeper than expected. The origin of this transient enhanced diffusion is the annealing of ion-implantation damage in the silicon substrate. We have found that point-defect generation during the annealing of either shallow end-of-range damage or small clusters of point defects dominates the transient enhanced diffusion process depending upon the annealing temperature and time. The net effect of damage annealing is to reduce the activation energy for dopant diffusion by an amount equal to the activation energy of the supersaturation of point defects in silicon. Models which can describe the transient enhancement characteristics in dopant diffusion during both furnace and rapid-thermal annealing of these implants are discussed. © 1989 AIME.

Duke Scholars

Published In

Journal of Electronic Materials

DOI

EISSN

1543-186X

ISSN

0361-5235

Publication Date

March 1, 1989

Volume

18

Issue

2

Start / End Page

143 / 150

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 1099 Other Technology
  • 0906 Electrical and Electronic Engineering
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics
 

Citation

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Kim, Y., Massoud, H. Z., & Fair, R. B. (1989). The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation. Journal of Electronic Materials, 18(2), 143–150. https://doi.org/10.1007/BF02657400
Kim, Y., H. Z. Massoud, and R. B. Fair. “The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation.” Journal of Electronic Materials 18, no. 2 (March 1, 1989): 143–50. https://doi.org/10.1007/BF02657400.
Kim Y, Massoud HZ, Fair RB. The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation. Journal of Electronic Materials. 1989 Mar 1;18(2):143–50.
Kim, Y., et al. “The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation.” Journal of Electronic Materials, vol. 18, no. 2, Mar. 1989, pp. 143–50. Scopus, doi:10.1007/BF02657400.
Kim Y, Massoud HZ, Fair RB. The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation. Journal of Electronic Materials. 1989 Mar 1;18(2):143–150.
Journal cover image

Published In

Journal of Electronic Materials

DOI

EISSN

1543-186X

ISSN

0361-5235

Publication Date

March 1, 1989

Volume

18

Issue

2

Start / End Page

143 / 150

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 1099 Other Technology
  • 0906 Electrical and Electronic Engineering
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics