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Comparison of functionalized III-V semiconductor response for nitric oxide

Publication ,  Journal Article
Garcia, MA; Losurdo, M; Wolter, SD; Lampert, WV; Bonaventura, J; Bruno, G; Yi, C; Brown, AS
Published in: Sensor Letters
August 1, 2008

Several III-V materials systems, consisting of InAs, InP, and GaN, were chemically functionalized, characterized, and evaluated for Nitric Oxide (NO) sensor research. The hemin porphyrin has been a particularly successful NO detection functional group for carbon-based material systems for sensors. The unique sensing modalities inherent in an InAs surface accumulation layer and the AlGaN/GaN surface polarization charge coupling motivated enhanced chemical sensor exploration. NO's diverse roles in defense, biological, and environmental fields create interest in the development of responsive and selective solid state sensors. In a controlled gaseous environment, functionalized and pre-functionalized III-V semiconductor materials were probed for changes in resistivity during exposure to varying concentrations of NO, NO2, O2, and Ar. X-ray photoelectron spectroscopy was used to characterize sample functionalization and analyte influences on the valence band maxima in order to better understand the charge transduction mechanisms. The results of the trials were compared and analyzed for optimization and materials recommendations. Copyright © 2008 American Scientific Publishers All rights reserved.

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Published In

Sensor Letters

DOI

ISSN

1546-198X

Publication Date

August 1, 2008

Volume

6

Issue

4

Start / End Page

627 / 634

Related Subject Headings

  • Analytical Chemistry
  • 0301 Analytical Chemistry
 

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Garcia, M. A., Losurdo, M., Wolter, S. D., Lampert, W. V., Bonaventura, J., Bruno, G., … Brown, A. S. (2008). Comparison of functionalized III-V semiconductor response for nitric oxide. Sensor Letters, 6(4), 627–634. https://doi.org/10.1166/sl.2008.448
Garcia, M. A., M. Losurdo, S. D. Wolter, W. V. Lampert, J. Bonaventura, G. Bruno, C. Yi, and A. S. Brown. “Comparison of functionalized III-V semiconductor response for nitric oxide.” Sensor Letters 6, no. 4 (August 1, 2008): 627–34. https://doi.org/10.1166/sl.2008.448.
Garcia MA, Losurdo M, Wolter SD, Lampert WV, Bonaventura J, Bruno G, et al. Comparison of functionalized III-V semiconductor response for nitric oxide. Sensor Letters. 2008 Aug 1;6(4):627–34.
Garcia, M. A., et al. “Comparison of functionalized III-V semiconductor response for nitric oxide.” Sensor Letters, vol. 6, no. 4, Aug. 2008, pp. 627–34. Scopus, doi:10.1166/sl.2008.448.
Garcia MA, Losurdo M, Wolter SD, Lampert WV, Bonaventura J, Bruno G, Yi C, Brown AS. Comparison of functionalized III-V semiconductor response for nitric oxide. Sensor Letters. 2008 Aug 1;6(4):627–634.

Published In

Sensor Letters

DOI

ISSN

1546-198X

Publication Date

August 1, 2008

Volume

6

Issue

4

Start / End Page

627 / 634

Related Subject Headings

  • Analytical Chemistry
  • 0301 Analytical Chemistry