Comparison of functionalized III-V semiconductor response for nitric oxide

Several III-V materials systems, consisting of InAs, InP, and GaN, were chemically functionalized, characterized, and evaluated for Nitric Oxide (NO) sensor research. The hemin porphyrin has been a particularly successful NO detection functional group for carbon-based material systems for sensors. The unique sensing modalities inherent in an InAs surface accumulation layer and the AlGaN/GaN surface polarization charge coupling motivated enhanced chemical sensor exploration. NO's diverse roles in defense, biological, and environmental fields create interest in the development of responsive and selective solid state sensors. In a controlled gaseous environment, functionalized and pre-functionalized III-V semiconductor materials were probed for changes in resistivity during exposure to varying concentrations of NO, NO2, O2, and Ar. X-ray photoelectron spectroscopy was used to characterize sample functionalization and analyte influences on the valence band maxima in order to better understand the charge transduction mechanisms. The results of the trials were compared and analyzed for optimization and materials recommendations. Copyright © 2008 American Scientific Publishers All rights reserved.

Duke Scholars

Author April S. Brown Electrical and Computer Engineering