High power and high efficiency AlInAs/GaInAs on InP HEMTs
Publication
, Journal Article
Matloubian, M; Nguyen, LD; Brown, AS; Larson, LE; Melendes, MA; Thompson, MA
Published in: IEEE MTT-S International Microwave Symposium Digest
December 1, 1991
The authors report on the development of AlInAs/GaInAs-on-InP power HEMTs (high electron mobility transistors). Output power densities of more than 730 mW/mm and 960 mW/mm with power-added efficiencies (PAE) of 50% and 40%, respectively, were achieved at 12 GHz. When biased for maximum efficiency, a PAE of 59% and an output power of 470 mW/mm with 11.3 dB gain were obtained. These results demonstrate the viability of these HEMTs for power amplification. Considering that these HEMTs have an fmax of over 200 GHz, they should also have good power performance at millimeter-wave frequencies.
Duke Scholars
Published In
IEEE MTT-S International Microwave Symposium Digest
ISSN
0149-645X
Publication Date
December 1, 1991
Volume
2
Start / End Page
721 / 724
Citation
APA
Chicago
ICMJE
MLA
NLM
Matloubian, M., Nguyen, L. D., Brown, A. S., Larson, L. E., Melendes, M. A., & Thompson, M. A. (1991). High power and high efficiency AlInAs/GaInAs on InP HEMTs. IEEE MTT-S International Microwave Symposium Digest, 2, 721–724.
Matloubian, M., L. D. Nguyen, A. S. Brown, L. E. Larson, M. A. Melendes, and M. A. Thompson. “High power and high efficiency AlInAs/GaInAs on InP HEMTs.” IEEE MTT-S International Microwave Symposium Digest 2 (December 1, 1991): 721–24.
Matloubian M, Nguyen LD, Brown AS, Larson LE, Melendes MA, Thompson MA. High power and high efficiency AlInAs/GaInAs on InP HEMTs. IEEE MTT-S International Microwave Symposium Digest. 1991 Dec 1;2:721–4.
Matloubian, M., et al. “High power and high efficiency AlInAs/GaInAs on InP HEMTs.” IEEE MTT-S International Microwave Symposium Digest, vol. 2, Dec. 1991, pp. 721–24.
Matloubian M, Nguyen LD, Brown AS, Larson LE, Melendes MA, Thompson MA. High power and high efficiency AlInAs/GaInAs on InP HEMTs. IEEE MTT-S International Microwave Symposium Digest. 1991 Dec 1;2:721–724.
Published In
IEEE MTT-S International Microwave Symposium Digest
ISSN
0149-645X
Publication Date
December 1, 1991
Volume
2
Start / End Page
721 / 724