High power and high efficiency AlInAs/GaInAs on InP HEMTs
Publication
, Journal Article
Matloubian, M; Nguyen, LD; Brown, AS; Larson, LE; Melendes, MA; Thompson, MA
Published in: IEEE MTT S International Microwave Symposium Digest
December 1, 1991
The authors report on the development of AlInAs/GaInAs-on-InP power HEMTs (high electron mobility transistors). Output power densities of more than 730 mW/mm and 960 mW/mm with power-added efficiencies (PAE) of 50% and 40%, respectively, were achieved at 12 GHz. When biased for maximum efficiency, a PAE of 59% and an output power of 470 mW/mm with 11.3 dB gain were obtained. These results demonstrate the viability of these HEMTs for power amplification. Considering that these HEMTs have an f
Duke Scholars
Published In
IEEE MTT S International Microwave Symposium Digest
ISSN
0149-645X
Publication Date
December 1, 1991
Volume
2
Start / End Page
721 / 724
Citation
APA
Chicago
ICMJE
MLA
NLM
Matloubian, M., Nguyen, L. D., Brown, A. S., Larson, L. E., Melendes, M. A., & Thompson, M. A. (1991). High power and high efficiency AlInAs/GaInAs on InP HEMTs. IEEE MTT S International Microwave Symposium Digest, 2, 721–724.
Matloubian, M., L. D. Nguyen, A. S. Brown, L. E. Larson, M. A. Melendes, and M. A. Thompson. “High power and high efficiency AlInAs/GaInAs on InP HEMTs.” IEEE MTT S International Microwave Symposium Digest 2 (December 1, 1991): 721–24.
Matloubian M, Nguyen LD, Brown AS, Larson LE, Melendes MA, Thompson MA. High power and high efficiency AlInAs/GaInAs on InP HEMTs. IEEE MTT S International Microwave Symposium Digest. 1991 Dec 1;2:721–4.
Matloubian, M., et al. “High power and high efficiency AlInAs/GaInAs on InP HEMTs.” IEEE MTT S International Microwave Symposium Digest, vol. 2, Dec. 1991, pp. 721–24.
Matloubian M, Nguyen LD, Brown AS, Larson LE, Melendes MA, Thompson MA. High power and high efficiency AlInAs/GaInAs on InP HEMTs. IEEE MTT S International Microwave Symposium Digest. 1991 Dec 1;2:721–724.
Published In
IEEE MTT S International Microwave Symposium Digest
ISSN
0149-645X
Publication Date
December 1, 1991
Volume
2
Start / End Page
721 / 724