RECESSED GATE Al//0 //. //4 //8 In//0 //. //5 //2 As/Ga//0 //. //4 //7 In//0 //. //5 //3 As MODULATION DOPED FIELD EFFECT TRANSISTOR.
Publication
, Journal Article
Itoh, T; Brown, AS; Camnitz, LH; Wicks, GW; Berry, JD; Eastman, LF
December 1, 1985
1- mu m gate Al//0 //. //4 //8 In//0 //. //5 //2 As/Ga//0 //. //4 //7 In//0 //. //5 //3 As modulation-doped field effect transistors have been successfully fabricated by using a recessed gate structure and an undoped Al//0 //. //4 //8 In//0 //. //5 //2 As top layer beneath the gate metal. The fabricated devices exhibited good dc characteristics with a high transconductance and a complete pinch-off characteristic. dc transconductances of 200 mS/mm and 265 mS/mm have been measured at 300K and 77K, respectively.
Duke Scholars
Publication Date
December 1, 1985
Start / End Page
92 / 101
Citation
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Itoh, T., Brown, A. S., Camnitz, L. H., Wicks, G. W., Berry, J. D., & Eastman, L. F. (1985). RECESSED GATE Al//0 //. //4 //8 In//0 //. //5 //2 As/Ga//0 //. //4 //7 In//0 //. //5 //3 As MODULATION DOPED FIELD EFFECT TRANSISTOR., 92–101.
Itoh, T., A. S. Brown, L. H. Camnitz, G. W. Wicks, J. D. Berry, and L. F. Eastman. “RECESSED GATE Al//0 //. //4 //8 In//0 //. //5 //2 As/Ga//0 //. //4 //7 In//0 //. //5 //3 As MODULATION DOPED FIELD EFFECT TRANSISTOR.,” December 1, 1985, 92–101.
Itoh T, Brown AS, Camnitz LH, Wicks GW, Berry JD, Eastman LF. RECESSED GATE Al//0 //. //4 //8 In//0 //. //5 //2 As/Ga//0 //. //4 //7 In//0 //. //5 //3 As MODULATION DOPED FIELD EFFECT TRANSISTOR. 1985 Dec 1;92–101.
Itoh, T., et al. RECESSED GATE Al//0 //. //4 //8 In//0 //. //5 //2 As/Ga//0 //. //4 //7 In//0 //. //5 //3 As MODULATION DOPED FIELD EFFECT TRANSISTOR. Dec. 1985, pp. 92–101.
Itoh T, Brown AS, Camnitz LH, Wicks GW, Berry JD, Eastman LF. RECESSED GATE Al//0 //. //4 //8 In//0 //. //5 //2 As/Ga//0 //. //4 //7 In//0 //. //5 //3 As MODULATION DOPED FIELD EFFECT TRANSISTOR. 1985 Dec 1;92–101.
Publication Date
December 1, 1985
Start / End Page
92 / 101