RECESSED GATE Al//0 //. //4 //8 In//0 //. //5 //2 As/Ga//0 //. //4 //7 In//0 //. //5 //3 As MODULATION DOPED FIELD EFFECT TRANSISTOR.

1- mu m gate Al//0 //. //4 //8 In//0 //. //5 //2 As/Ga//0 //. //4 //7 In//0 //. //5 //3 As modulation-doped field effect transistors have been successfully fabricated by using a recessed gate structure and an undoped Al//0 //. //4 //8 In//0 //. //5 //2 As top layer beneath the gate metal. The fabricated devices exhibited good dc characteristics with a high transconductance and a complete pinch-off characteristic. dc transconductances of 200 mS/mm and 265 mS/mm have been measured at 300K and 77K, respectively.

Duke Scholars

Author April S. Brown Electrical and Computer Engineering