Skip to main content

Growth and characterization of InGaAs/AlInAs HEMT structures on oxide-bonded InGaAs substrates

Publication ,  Journal Article
Shen, JJ; Kim, TH; Brown, AS
Published in: IEEE International Symposium on Compound Semiconductors, Proceedings
December 1, 2000

InGaAs/AlInAs HEMT structures have been grown on oxide-bonded InGaAs substrates. De-oxidation and growth conditions are developed that enable good electrical properties. The highest electron mobility obtained was 7258 cm2/V at 300K. The surface morphology showed undulations. X-ray rocking curve analysis shows differences in lattice constants between the samples grown on control substrates and the oxide-bonded substrates.

Duke Scholars

Published In

IEEE International Symposium on Compound Semiconductors, Proceedings

Publication Date

December 1, 2000

Start / End Page

131 / 135
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Shen, J. J., Kim, T. H., & Brown, A. S. (2000). Growth and characterization of InGaAs/AlInAs HEMT structures on oxide-bonded InGaAs substrates. IEEE International Symposium on Compound Semiconductors, Proceedings, 131–135.
Shen, J. J., T. H. Kim, and A. S. Brown. “Growth and characterization of InGaAs/AlInAs HEMT structures on oxide-bonded InGaAs substrates.” IEEE International Symposium on Compound Semiconductors, Proceedings, December 1, 2000, 131–35.
Shen JJ, Kim TH, Brown AS. Growth and characterization of InGaAs/AlInAs HEMT structures on oxide-bonded InGaAs substrates. IEEE International Symposium on Compound Semiconductors, Proceedings. 2000 Dec 1;131–5.
Shen, J. J., et al. “Growth and characterization of InGaAs/AlInAs HEMT structures on oxide-bonded InGaAs substrates.” IEEE International Symposium on Compound Semiconductors, Proceedings, Dec. 2000, pp. 131–35.
Shen JJ, Kim TH, Brown AS. Growth and characterization of InGaAs/AlInAs HEMT structures on oxide-bonded InGaAs substrates. IEEE International Symposium on Compound Semiconductors, Proceedings. 2000 Dec 1;131–135.

Published In

IEEE International Symposium on Compound Semiconductors, Proceedings

Publication Date

December 1, 2000

Start / End Page

131 / 135