Growth and characterization of InGaAs/AlInAs HEMT structures on oxide-bonded InGaAs substrates
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, Journal Article
Shen, JJ; Kim, TH; Brown, AS
Published in: IEEE International Symposium on Compound Semiconductors, Proceedings
December 1, 2000
InGaAs/AlInAs HEMT structures have been grown on oxide-bonded InGaAs substrates. De-oxidation and growth conditions are developed that enable good electrical properties. The highest electron mobility obtained was 7258 cm2/V at 300K. The surface morphology showed undulations. X-ray rocking curve analysis shows differences in lattice constants between the samples grown on control substrates and the oxide-bonded substrates.
Duke Scholars
Published In
IEEE International Symposium on Compound Semiconductors, Proceedings
Publication Date
December 1, 2000
Start / End Page
131 / 135
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Shen, J. J., Kim, T. H., & Brown, A. S. (2000). Growth and characterization of InGaAs/AlInAs HEMT structures on oxide-bonded InGaAs substrates. IEEE International Symposium on Compound Semiconductors, Proceedings, 131–135.
Shen, J. J., T. H. Kim, and A. S. Brown. “Growth and characterization of InGaAs/AlInAs HEMT structures on oxide-bonded InGaAs substrates.” IEEE International Symposium on Compound Semiconductors, Proceedings, December 1, 2000, 131–35.
Shen JJ, Kim TH, Brown AS. Growth and characterization of InGaAs/AlInAs HEMT structures on oxide-bonded InGaAs substrates. IEEE International Symposium on Compound Semiconductors, Proceedings. 2000 Dec 1;131–5.
Shen, J. J., et al. “Growth and characterization of InGaAs/AlInAs HEMT structures on oxide-bonded InGaAs substrates.” IEEE International Symposium on Compound Semiconductors, Proceedings, Dec. 2000, pp. 131–35.
Shen JJ, Kim TH, Brown AS. Growth and characterization of InGaAs/AlInAs HEMT structures on oxide-bonded InGaAs substrates. IEEE International Symposium on Compound Semiconductors, Proceedings. 2000 Dec 1;131–135.
Published In
IEEE International Symposium on Compound Semiconductors, Proceedings
Publication Date
December 1, 2000
Start / End Page
131 / 135