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PROCESS MODELS FOR ULTRA-SHALLOW JUNCTION TECHNOLOGIES.

Publication ,  Journal Article
Fair, RB
Published in: Technical Digest - International Electron Devices Meeting
January 1, 1987

Submicrometer technologies include low thermal budget processing, Ge** plus or Si** plus preamorphization implants, ultra low-energy B and As implants, thin oxides, and silicide contacts. These technologies and the models required to simulate them are not simple extrapolations of existing process models. Major new process variables used include crystal damage produced during implantation and the annealing of this damage, point-defect injection during contacting, and implantation parameters associated with preamorphization. Process models that describe these effects are described. The models are based on extensive data generated as part of a shallow junction, submicrometer CMOS program; the models have been imbedded in the PREDICT process simulation code.

Duke Scholars

Published In

Technical Digest - International Electron Devices Meeting

DOI

ISSN

0163-1918

Publication Date

January 1, 1987

Start / End Page

260 / 263
 

Citation

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Fair, R. B. (1987). PROCESS MODELS FOR ULTRA-SHALLOW JUNCTION TECHNOLOGIES. Technical Digest - International Electron Devices Meeting, 260–263. https://doi.org/10.1109/iedm.1987.191404
Fair, R. B. “PROCESS MODELS FOR ULTRA-SHALLOW JUNCTION TECHNOLOGIES.Technical Digest - International Electron Devices Meeting, January 1, 1987, 260–63. https://doi.org/10.1109/iedm.1987.191404.
Fair RB. PROCESS MODELS FOR ULTRA-SHALLOW JUNCTION TECHNOLOGIES. Technical Digest - International Electron Devices Meeting. 1987 Jan 1;260–3.
Fair, R. B. “PROCESS MODELS FOR ULTRA-SHALLOW JUNCTION TECHNOLOGIES.Technical Digest - International Electron Devices Meeting, Jan. 1987, pp. 260–63. Scopus, doi:10.1109/iedm.1987.191404.
Fair RB. PROCESS MODELS FOR ULTRA-SHALLOW JUNCTION TECHNOLOGIES. Technical Digest - International Electron Devices Meeting. 1987 Jan 1;260–263.

Published In

Technical Digest - International Electron Devices Meeting

DOI

ISSN

0163-1918

Publication Date

January 1, 1987

Start / End Page

260 / 263