PROCESS MODELS FOR ULTRA-SHALLOW JUNCTION TECHNOLOGIES.
Submicrometer technologies include low thermal budget processing, Ge** plus or Si** plus preamorphization implants, ultra low-energy B and As implants, thin oxides, and silicide contacts. These technologies and the models required to simulate them are not simple extrapolations of existing process models. Major new process variables used include crystal damage produced during implantation and the annealing of this damage, point-defect injection during contacting, and implantation parameters associated with preamorphization. Process models that describe these effects are described. The models are based on extensive data generated as part of a shallow junction, submicrometer CMOS program; the models have been imbedded in the PREDICT process simulation code.
