Measurement and Modeling of Charge Feedthrough in n-Channel MOS Analog Switches
Publication
, Journal Article
Wilson, WB; Massoud, HZ; Swanson, EJ; George, RT; Fair, RB
Published in: IEEE Journal of Solid-State Circuits
January 1, 1985
Charge feedthrough in analog MOS switches has been measured. The dependence of the feedthrough voltage on the input and tub voltages, device dimensions, and load capacitances was characterized. Most importantly, it was observed that the feedthrough voltage decreases linearly with the input voltage. The significance of this observation when considering harmonic distortion in sample-and-hold circuits is discussed. A first-order computer simulation based on the quasi-static small-signal MOSFET capacitances shows good agreement with experimental results. © 1985 IEEE
Duke Scholars
Altmetric Attention Stats
Dimensions Citation Stats
Published In
IEEE Journal of Solid-State Circuits
DOI
EISSN
1558-173X
ISSN
0018-9200
Publication Date
January 1, 1985
Volume
20
Issue
6
Start / End Page
1206 / 1213
Related Subject Headings
- Electrical & Electronic Engineering
- 4009 Electronics, sensors and digital hardware
- 1099 Other Technology
- 0906 Electrical and Electronic Engineering
- 0204 Condensed Matter Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Wilson, W. B., Massoud, H. Z., Swanson, E. J., George, R. T., & Fair, R. B. (1985). Measurement and Modeling of Charge Feedthrough in n-Channel MOS Analog Switches. IEEE Journal of Solid-State Circuits, 20(6), 1206–1213. https://doi.org/10.1109/JSSC.1985.1052460
Wilson, W. B., H. Z. Massoud, E. J. Swanson, R. T. George, and R. B. Fair. “Measurement and Modeling of Charge Feedthrough in n-Channel MOS Analog Switches.” IEEE Journal of Solid-State Circuits 20, no. 6 (January 1, 1985): 1206–13. https://doi.org/10.1109/JSSC.1985.1052460.
Wilson WB, Massoud HZ, Swanson EJ, George RT, Fair RB. Measurement and Modeling of Charge Feedthrough in n-Channel MOS Analog Switches. IEEE Journal of Solid-State Circuits. 1985 Jan 1;20(6):1206–13.
Wilson, W. B., et al. “Measurement and Modeling of Charge Feedthrough in n-Channel MOS Analog Switches.” IEEE Journal of Solid-State Circuits, vol. 20, no. 6, Jan. 1985, pp. 1206–13. Scopus, doi:10.1109/JSSC.1985.1052460.
Wilson WB, Massoud HZ, Swanson EJ, George RT, Fair RB. Measurement and Modeling of Charge Feedthrough in n-Channel MOS Analog Switches. IEEE Journal of Solid-State Circuits. 1985 Jan 1;20(6):1206–1213.
Published In
IEEE Journal of Solid-State Circuits
DOI
EISSN
1558-173X
ISSN
0018-9200
Publication Date
January 1, 1985
Volume
20
Issue
6
Start / End Page
1206 / 1213
Related Subject Headings
- Electrical & Electronic Engineering
- 4009 Electronics, sensors and digital hardware
- 1099 Other Technology
- 0906 Electrical and Electronic Engineering
- 0204 Condensed Matter Physics