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High mobility solution-deposited chalcogenide films for flexible applications

Publication ,  Conference
Mitzi, DB; Milliron, DJ; Copel, M; Murray, C; Kosbar, L
Published in: 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers
October 31, 2005
Published version (DOI)

The fabrication of solution-processed thin-film transistors (TFTs), which yield field-effect mobilities >10 cm2/V-sec, is a key challenge for the production of high-performance flexible electronics. This talk addresses a hydrazinium precursor approach for solution-processing metal chalcogenide films. Ultrathin n-type SnSe2-xSx, In2Se 3 and p-type CuInSe2-xSx TFT channels have been deposited by spin coating from hydrazine- and non-hydrazine-based solutions, yielding saturation regime field-effect mobilities and on-off ratios as high as 16 cm2/V-s and 106, respectively. The new deposition technique is expected to be extendable to a wider range of metal chalcogenides, offering opportunities for TFTs as well as other thin-film devices, including solar cells, memory and thermoelectric devices. © 2005 IEEE.

Duke Scholars

David Mitzi
Author David Mitzi Thomas Lord Department of Mechanical Engineering and Materia ...

Published In

2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

DOI

10.1109/VTSA.2005.1497075

Publication Date

October 31, 2005

Start / End Page

41 / 44
 

Citation

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Mitzi, D. B., Milliron, D. J., Copel, M., Murray, C., & Kosbar, L. (2005). High mobility solution-deposited chalcogenide films for flexible applications. In 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers (pp. 41–44). https://doi.org/10.1109/VTSA.2005.1497075
Mitzi, D. B., D. J. Milliron, M. Copel, C. Murray, and L. Kosbar. “High mobility solution-deposited chalcogenide films for flexible applications.” In 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers, 41–44, 2005. https://doi.org/10.1109/VTSA.2005.1497075.
Mitzi DB, Milliron DJ, Copel M, Murray C, Kosbar L. High mobility solution-deposited chalcogenide films for flexible applications. In: 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers. 2005. p. 41–4.
Mitzi, D. B., et al. “High mobility solution-deposited chalcogenide films for flexible applications.” 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers, 2005, pp. 41–44. Scopus, doi:10.1109/VTSA.2005.1497075.
Mitzi DB, Milliron DJ, Copel M, Murray C, Kosbar L. High mobility solution-deposited chalcogenide films for flexible applications. 2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers. 2005. p. 41–44.

Published In

2005 IEEE VLSI-TSA - International Symposium on VLSI Technology - VLSI-TSA-TECH, Proceedings of Technical Papers

DOI

10.1109/VTSA.2005.1497075

Publication Date

October 31, 2005

Start / End Page

41 / 44