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High mobility solution-deposited chalcogenide films for flexible applications

Publication ,  Conference
Mitzi, DB; Milliron, DJ; Copel, M; Murray, C; Kosbar, L
Published in: 2005 IEEE VLSI Tsa International Symposium on VLSI Technology VLSI Tsa TECH Proceedings of Technical Papers
October 31, 2005
Published version (DOI)

The fabrication of solution-processed thin-film transistors (TFTs), which yield field-effect mobilities >10 cm2/V-sec, is a key challenge for the production of high-performance flexible electronics. This talk addresses a hydrazinium precursor approach for solution-processing metal chalcogenide films. Ultrathin n-type SnSe2-xSx, In2Se 3 and p-type CuInSe2-xSx TFT channels have been deposited by spin coating from hydrazine- and non-hydrazine-based solutions, yielding saturation regime field-effect mobilities and on-off ratios as high as 16 cm2/V-s and 106, respectively. The new deposition technique is expected to be extendable to a wider range of metal chalcogenides, offering opportunities for TFTs as well as other thin-film devices, including solar cells, memory and thermoelectric devices. © 2005 IEEE.

Duke Scholars

David Mitzi
Author David Mitzi Thomas Lord Department of Mechanical Engineering and Materia ...

Published In

2005 IEEE VLSI Tsa International Symposium on VLSI Technology VLSI Tsa TECH Proceedings of Technical Papers

DOI

10.1109/VTSA.2005.1497075

Publication Date

October 31, 2005

Start / End Page

41 / 44
 

Citation

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Mitzi, D. B., Milliron, D. J., Copel, M., Murray, C., & Kosbar, L. (2005). High mobility solution-deposited chalcogenide films for flexible applications. In 2005 IEEE VLSI Tsa International Symposium on VLSI Technology VLSI Tsa TECH Proceedings of Technical Papers (pp. 41–44). https://doi.org/10.1109/VTSA.2005.1497075
Mitzi, D. B., D. J. Milliron, M. Copel, C. Murray, and L. Kosbar. “High mobility solution-deposited chalcogenide films for flexible applications.” In 2005 IEEE VLSI Tsa International Symposium on VLSI Technology VLSI Tsa TECH Proceedings of Technical Papers, 41–44, 2005. https://doi.org/10.1109/VTSA.2005.1497075.
Mitzi DB, Milliron DJ, Copel M, Murray C, Kosbar L. High mobility solution-deposited chalcogenide films for flexible applications. In: 2005 IEEE VLSI Tsa International Symposium on VLSI Technology VLSI Tsa TECH Proceedings of Technical Papers. 2005. p. 41–4.
Mitzi, D. B., et al. “High mobility solution-deposited chalcogenide films for flexible applications.” 2005 IEEE VLSI Tsa International Symposium on VLSI Technology VLSI Tsa TECH Proceedings of Technical Papers, 2005, pp. 41–44. Scopus, doi:10.1109/VTSA.2005.1497075.
Mitzi DB, Milliron DJ, Copel M, Murray C, Kosbar L. High mobility solution-deposited chalcogenide films for flexible applications. 2005 IEEE VLSI Tsa International Symposium on VLSI Technology VLSI Tsa TECH Proceedings of Technical Papers. 2005. p. 41–44.

Published In

2005 IEEE VLSI Tsa International Symposium on VLSI Technology VLSI Tsa TECH Proceedings of Technical Papers

DOI

10.1109/VTSA.2005.1497075

Publication Date

October 31, 2005

Start / End Page

41 / 44