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Band alignment at the Cu2 ZnSn (SxSe1-x) 4 /CdS interface

Publication ,  Journal Article
Haight, R; Barkhouse, A; Gunawan, O; Shin, B; Copel, M; Hopstaken, M; Mitzi, DB
Published in: Applied Physics Letters
June 20, 2011
Published version (DOI)

Energy band alignments between CdS and Cu2 ZnSn (S xSe1-x) 4 (CZTSSe) grown via solution-based and vacuum-based deposition routes were studied as a function of the [S] / [S+Se] ratio with femtosecond laser ultraviolet photoelectron spectroscopy, photoluminescence, medium energy ion scattering, and secondary ion mass spectrometry. Band bending in the underlying CZTSSe layer was measured via pump/probe photovoltage shifts of the photoelectron spectra and offsets were determined with photoemission under flat band conditions. Increasing the S content of the CZTSSe films produces a valence edge shift to higher binding energy and increases the CZTSSe band gap. In all cases, the CdS conduction band offsets were spikes. © 2011 American Institute of Physics.

Duke Scholars

David Mitzi
Author David Mitzi Thomas Lord Department of Mechanical Engineering and Materia ...

Published In

Applied Physics Letters

DOI

10.1063/1.3600776

ISSN

0003-6951

Publication Date

June 20, 2011

Volume

98

Issue

25

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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Haight, R., Barkhouse, A., Gunawan, O., Shin, B., Copel, M., Hopstaken, M., & Mitzi, D. B. (2011). Band alignment at the Cu2 ZnSn (SxSe1-x) 4 /CdS interface. Applied Physics Letters, 98(25). https://doi.org/10.1063/1.3600776
Haight, R., A. Barkhouse, O. Gunawan, B. Shin, M. Copel, M. Hopstaken, and D. B. Mitzi. “Band alignment at the Cu2 ZnSn (SxSe1-x) 4 /CdS interface.” Applied Physics Letters 98, no. 25 (June 20, 2011). https://doi.org/10.1063/1.3600776.
Haight R, Barkhouse A, Gunawan O, Shin B, Copel M, Hopstaken M, et al. Band alignment at the Cu2 ZnSn (SxSe1-x) 4 /CdS interface. Applied Physics Letters. 2011 Jun 20;98(25).
Haight, R., et al. “Band alignment at the Cu2 ZnSn (SxSe1-x) 4 /CdS interface.” Applied Physics Letters, vol. 98, no. 25, June 2011. Scopus, doi:10.1063/1.3600776.
Haight R, Barkhouse A, Gunawan O, Shin B, Copel M, Hopstaken M, Mitzi DB. Band alignment at the Cu2 ZnSn (SxSe1-x) 4 /CdS interface. Applied Physics Letters. 2011 Jun 20;98(25).

Published In

Applied Physics Letters

DOI

10.1063/1.3600776

ISSN

0003-6951

Publication Date

June 20, 2011

Volume

98

Issue

25

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences