Skip to main content
Journal cover image

Dependence on diameter and growth direction of apparent strain to failure of Si nanowires

Publication ,  Journal Article
Steighner, MS; Snedeker, LP; Boyce, BL; Gall, K; Miller, DC; Muhlstein, CL
Published in: Journal of Applied Physics
February 1, 2011

Previous studies of the mechanical properties of Si nanowires have not shown the size-dependent strengths that are expected for this prototypical brittle material. A potential source of the ambiguity in the literature is the development of tensile stresses during the large (nonlinear) deflections that were present during the flexure tests. In this work we show that size-dependent strengths can be observed in Si nanowires when they are evaluated using uniaxial tension loading conditions. Si nanowires with diameters ranging from 268 to 840 nm were fabricated using the vapor-liquid-solid method and were strained to failure in vacuum using a micromachined load frame. The smallest nanowires were the strongest but the magnitude of the size effect suggests that the flaw populations in Si nanowires are orientation-dependent. © 2011 American Institute of Physics.

Duke Scholars

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

February 1, 2011

Volume

109

Issue

3

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Steighner, M. S., Snedeker, L. P., Boyce, B. L., Gall, K., Miller, D. C., & Muhlstein, C. L. (2011). Dependence on diameter and growth direction of apparent strain to failure of Si nanowires. Journal of Applied Physics, 109(3). https://doi.org/10.1063/1.3537658
Steighner, M. S., L. P. Snedeker, B. L. Boyce, K. Gall, D. C. Miller, and C. L. Muhlstein. “Dependence on diameter and growth direction of apparent strain to failure of Si nanowires.” Journal of Applied Physics 109, no. 3 (February 1, 2011). https://doi.org/10.1063/1.3537658.
Steighner MS, Snedeker LP, Boyce BL, Gall K, Miller DC, Muhlstein CL. Dependence on diameter and growth direction of apparent strain to failure of Si nanowires. Journal of Applied Physics. 2011 Feb 1;109(3).
Steighner, M. S., et al. “Dependence on diameter and growth direction of apparent strain to failure of Si nanowires.” Journal of Applied Physics, vol. 109, no. 3, Feb. 2011. Scopus, doi:10.1063/1.3537658.
Steighner MS, Snedeker LP, Boyce BL, Gall K, Miller DC, Muhlstein CL. Dependence on diameter and growth direction of apparent strain to failure of Si nanowires. Journal of Applied Physics. 2011 Feb 1;109(3).
Journal cover image

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

February 1, 2011

Volume

109

Issue

3

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences