A novel technique to make Ohmic contact to a buried two-dimensional electron gas in a molecular-beam-epitaxy grown GaAs/Al0.3Ga0.7As heterostructure with Mn δ-doping
Publication
, Journal Article
Bove, A; Altomare, F; Kundtz, N; Chang, AM; Cho, YJ; Liu, X; Furdyna, J
Duke Scholars
Publisher
Cornell University Library
Citation
APA
Chicago
ICMJE
MLA
NLM
Bove, A., Altomare, F., Kundtz, N., Chang, A. M., Cho, Y. J., Liu, X., & Furdyna, J. (n.d.). A novel technique to make Ohmic contact to a buried two-dimensional electron gas in a molecular-beam-epitaxy grown GaAs/Al0.3Ga0.7As heterostructure with Mn δ-doping.
Bove, A., F. Altomare, N. Kundtz, A. M. Chang, Y. J. Cho, X. Liu, and J. Furdyna. “A novel technique to make Ohmic contact to a buried two-dimensional electron gas in a molecular-beam-epitaxy grown GaAs/Al0.3Ga0.7As heterostructure with Mn δ-doping,” n.d.
Bove A, Altomare F, Kundtz N, Chang AM, Cho YJ, Liu X, et al. A novel technique to make Ohmic contact to a buried two-dimensional electron gas in a molecular-beam-epitaxy grown GaAs/Al0.3Ga0.7As heterostructure with Mn δ-doping.
Bove, A., et al. A novel technique to make Ohmic contact to a buried two-dimensional electron gas in a molecular-beam-epitaxy grown GaAs/Al0.3Ga0.7As heterostructure with Mn δ-doping. Cornell University Library.
Bove A, Altomare F, Kundtz N, Chang AM, Cho YJ, Liu X, Furdyna J. A novel technique to make Ohmic contact to a buried two-dimensional electron gas in a molecular-beam-epitaxy grown GaAs/Al0.3Ga0.7As heterostructure with Mn δ-doping. Cornell University Library;
Publisher
Cornell University Library