Correction to “Optimum Low-Level Injection Efficiency of Silicon Transistors with Shallow Arsenic Emitters”
Publication
, Journal Article
Fair, RB
Published in: IEEE Transactions on Electron Devices
January 1, 1973
Duke Scholars
Published In
IEEE Transactions on Electron Devices
DOI
EISSN
1557-9646
ISSN
0018-9383
Publication Date
January 1, 1973
Volume
20
Issue
12
Start / End Page
1169
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering
Citation
APA
Chicago
ICMJE
MLA
NLM
Fair, R. B. (1973). Correction to “Optimum Low-Level Injection Efficiency of Silicon Transistors with Shallow Arsenic Emitters”. IEEE Transactions on Electron Devices, 20(12), 1169. https://doi.org/10.1109/T-ED.1973.17816
Fair, R. B. “Correction to “Optimum Low-Level Injection Efficiency of Silicon Transistors with Shallow Arsenic Emitters”.” IEEE Transactions on Electron Devices 20, no. 12 (January 1, 1973): 1169. https://doi.org/10.1109/T-ED.1973.17816.
Fair RB. Correction to “Optimum Low-Level Injection Efficiency of Silicon Transistors with Shallow Arsenic Emitters”. IEEE Transactions on Electron Devices. 1973 Jan 1;20(12):1169.
Fair, R. B. “Correction to “Optimum Low-Level Injection Efficiency of Silicon Transistors with Shallow Arsenic Emitters”.” IEEE Transactions on Electron Devices, vol. 20, no. 12, Jan. 1973, p. 1169. Scopus, doi:10.1109/T-ED.1973.17816.
Fair RB. Correction to “Optimum Low-Level Injection Efficiency of Silicon Transistors with Shallow Arsenic Emitters”. IEEE Transactions on Electron Devices. 1973 Jan 1;20(12):1169.
Published In
IEEE Transactions on Electron Devices
DOI
EISSN
1557-9646
ISSN
0018-9383
Publication Date
January 1, 1973
Volume
20
Issue
12
Start / End Page
1169
Related Subject Headings
- Applied Physics
- 4009 Electronics, sensors and digital hardware
- 0906 Electrical and Electronic Engineering