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The characteristics of MBE-grown InxAl1-xN/GaN surface states

Journal articles  - Journal Article
Jiao, W; Kong, W; Li, J; Collar, K; Kim, TH; Losurdo, M; Brown, AS
Published in: Applied Physics Letters
August 22, 2016
Published version (DOI)

The density and energy distribution of InxAl1-xN/GaN surface donor states are studied for InxAl1-xN structures with varying indium compositions. The results support a surface states model with a constant energy distribution of 2.17-2.63 eV below the conduction band minimum and a concentration of 4.64-8.27 × 1013 cm-2 eV-1. It is shown that the properties of the surface states are affected by the surface indium composition xs, as opposed to the bulk composition, xb (InxAl1-xN). Higher surface indium composition xs increases the density of surface states and narrows their energy distribution.

Duke Scholars

April S. Brown
Author April S. Brown Pierre R. Lamond Department of Electrical and Computer Engin ...
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Published In

Applied Physics Letters

DOI

10.1063/1.4961583

ISSN

0003-6951

Publication Date

August 22, 2016

Volume

109

Issue

8

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
 

Citation

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Jiao, W., Kong, W., Li, J., Collar, K., Kim, T. H., Losurdo, M., & Brown, A. S. (2016). The characteristics of MBE-grown InxAl1-xN/GaN surface states. Applied Physics Letters, 109(8). https://doi.org/10.1063/1.4961583
Jiao, W., W. Kong, J. Li, K. Collar, T. H. Kim, M. Losurdo, and A. S. Brown. “The characteristics of MBE-grown InxAl1-xN/GaN surface states.” Applied Physics Letters 109, no. 8 (August 22, 2016). https://doi.org/10.1063/1.4961583.
Jiao W, Kong W, Li J, Collar K, Kim TH, Losurdo M, et al. The characteristics of MBE-grown InxAl1-xN/GaN surface states. Applied Physics Letters. 2016 Aug 22;109(8).
Jiao, W., et al. “The characteristics of MBE-grown InxAl1-xN/GaN surface states.” Applied Physics Letters, vol. 109, no. 8, Aug. 2016. Scopus, doi:10.1063/1.4961583.
Jiao W, Kong W, Li J, Collar K, Kim TH, Losurdo M, Brown AS. The characteristics of MBE-grown InxAl1-xN/GaN surface states. Applied Physics Letters. 2016 Aug 22;109(8).

Published In

Applied Physics Letters

DOI

10.1063/1.4961583

ISSN

0003-6951

Publication Date

August 22, 2016

Volume

109

Issue

8

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering